Weiliang Jing
According to our database1,
Weiliang Jing
authored at least 8 papers
between 2017 and 2022.
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Collaborative distances:
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Bibliography
2022
Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD with High Read Current of 32.8 μA/μm (Vth + 1 V), Well-performed Thermal Stability up to 120 ℃ for Low Latency, High-density 2T0C 3D DRAM Application.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
Compact Modeling of IGZO-based CAA-FETs with Time-zero-instability and BTI Impact on Device and Capacitor-less DRAM Retention Reliability.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
2019
2017
IEEE Trans. Computers, 2017
Erratum: CAM-based retention-aware DRAM (CRA-DRAM) for refresh power reduction [IEICE Electronics Express Vol. 14 (2017) No. 10 pp. 20170053].
IEICE Electron. Express, 2017
IEICE Electron. Express, 2017
Logic area reduction using the deep trench isolation technique based on 40 nm embedded PCM process.
IEICE Electron. Express, 2017
IEICE Electron. Express, 2017