Weiliang Jing

According to our database1, Weiliang Jing authored at least 8 papers between 2017 and 2022.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Dataset
Other 

Links

On csauthors.net:

Bibliography

2022
Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD with High Read Current of 32.8 μA/μm (Vth + 1 V), Well-performed Thermal Stability up to 120 ℃ for Low Latency, High-density 2T0C 3D DRAM Application.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Compact Modeling of IGZO-based CAA-FETs with Time-zero-instability and BTI Impact on Device and Capacitor-less DRAM Retention Reliability.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

2019
Subsystem under 3D-Storage Class Memory on a chip.
Comput. Electr. Eng., 2019

2017
Retention-Aware Hybrid Main Memory (RAHMM): Big DRAM and Little SCM.
IEEE Trans. Computers, 2017

Erratum: CAM-based retention-aware DRAM (CRA-DRAM) for refresh power reduction [IEICE Electronics Express Vol. 14 (2017) No. 10 pp. 20170053].
IEICE Electron. Express, 2017

CAM-based retention-aware DRAM (CRA-DRAM) for refresh power reduction.
IEICE Electron. Express, 2017

Logic area reduction using the deep trench isolation technique based on 40 nm embedded PCM process.
IEICE Electron. Express, 2017

Multi-core architecture with asynchronous clocks to prevent power analysis attacks.
IEICE Electron. Express, 2017


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