Wenlun Zhang
Orcid: 0000-0003-1570-082X
According to our database1,
Wenlun Zhang authored at least 16 papers
between 2021 and 2026.
Collaborative distances:
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Bibliography
2026
MCRA: Multicolumn Residue Accumulation Analog Compute-in-Memory Architecture With Time-Domain M-Input ΣΔ ADC.
IEEE Trans. Very Large Scale Integr. Syst., May, 2026
Detect in Any Scene: An Agentic Framework for Object Detection with Experience-Aware Reasoning.
CoRR, May, 2026
Neural Reconstruction of LiDAR Point Clouds under Jamming Attacks via Full-Waveform Representation and Simultaneous Laser Sensing.
CoRR, April, 2026
SNNQ: Post-Training Quantization Towards Ultra Low-Bit and Fast Spiking Neural Networks.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2026
BitROM: Weight Reload-Free CiROM Architecture Towards Billion-Parameter 1.58-bit LLM Inference.
Proceedings of the 31st Asia and South Pacific Design Automation Conference, 2026
2025
CoRR, November, 2025
IEEE Trans. Very Large Scale Integr. Syst., October, 2025
AHCPTQ: Accurate and Hardware-Compatible Post-Training Quantization for Segment Anything Model.
CoRR, March, 2025
A Cache Memory with 3-Level Tile-Based Data Layout and Tag-Memory Optimization Method for 2-D Data Access.
IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 2025
LiSA: Leveraging Link Recommender to Attack Graph Neural Networks via Subgraph Injection.
Proceedings of the Advances in Knowledge Discovery and Data Mining, 2025
AHCPTQ: Accurate and Hardware-Compatible Post-Training Quantization for Segment Anything Model.
Proceedings of the IEEE/CVF International Conference on Computer Vision, 2025
Proceedings of the 2025 IEEE International Conference on Acoustics, 2025
2024
ASiM: Improving Transparency of SRAM-based Analog Compute-in-Memory Research with an Open-Source Simulation Framework.
CoRR, 2024
PACiM: A Sparsity-Centric Hybrid Compute-in-Memory Architecture via Probabilistic Approximation.
Proceedings of the 43rd IEEE/ACM International Conference on Computer-Aided Design, 2024
2021
Design and Investigation of Silicon Gate-All-Around Junctionless Field-Effect Transistor Using a Step Thickness Gate Oxide.
IEICE Trans. Electron., 2021