Wenshen Li

According to our database, Wenshen Li authored at least 7 papers between 2018 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2022

On the PBTI Reliability of Low EOT Negative Capacitance 1.8 nm HfO2-ZrO2 Superlattice Gate Stack on Lg=90 nm nFETs.

Nirmaan Shanker, Li-Chen Wang, Suraj S. Cheema, Wenshen Li, Nilotpal Choudhury, Chenming Hu, Souvik Mahapatra, Sayeef S. Salahuddin

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

A Composite TE-TFE-FE Model for Schottky Barrier Reverse Current over the Entire Electric-Field Range.

Wenshen Li, Debdeep Jena, Huili Grace Xing

Proceedings of the Device Research Conference, 2022

2020

Very High Parallel-Plane Surface Electric Field of 4.3 MV/cm in Ga2O3 Schottky Barrier Diodes with PtOx Contacts.

Devansh Saraswat, Wenshen Li, Kazuki Nomoto, Debdeep Jena, Huili Grace Xing

Proceedings of the 2020 Device Research Conference, 2020

2019

Field-plated Ga2O3 Trench Schottky Barrier Diodes with a Record High Figure-of-merit of 0.78 GW/cm².

Wenshen Li, Kazuki Nomoto, Zongyang Hu, Debdeep Jena, Huili Grace Xing

Proceedings of the Device Research Conference, 2019

Barrier Height Stability and Reverse Leakage Mechanisms in Ni/Ga2O3 (001) Schottky Barrier Diodes.

Wenshen Li, Kazuki Nornoto, Zongyang Hu, Debdeep Jena, Huili Grace Xing

Proceedings of the Device Research Conference, 2019

2018

Degradation of GaN-on-GaN vertical diodes submitted to high current stress.

Eric E. Fabris, Matteo Meneghini, Carlo De Santi, Zongyang Hu, Wenshen Li, Kazuki Nomoto, Debdeep Jena, Huili Grace Xing, Xiang Gao, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2018

1.5 kV Vertical Ga2O3 Trench-MIS Schottky Barrier Diodes.

Wenshen Li, Kazuki Nomoto, Zongyang Hu, Nicholas Tanen, Kohei Sasaki, Akito Kuramata, Debdeep Jena, Huili Grace Xing

Proceedings of the 76th Device Research Conference, 2018