Akira Heya

Orcid: 0000-0001-5966-4387

According to our database1, Akira Heya authored at least 14 papers between 2007 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

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PhD thesis 
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Links

On csauthors.net:

Bibliography

2024
Influence of the Gate Voltage or the Base Pair Ratio Modulation on the λ-DNA FET Performance.
IEICE Trans. Electron., 2024

2023
Development of Compact 3-Degree-of-Freedom Oscillatory Actuator.
J. Robotics Mechatronics, October, 2023

Dynamic Analysis of Switching Type Disturbance Suppression Control System Based on Disturbance Estimation of Triaxial Active Control Magnetic Bearing.
Proceedings of the 49th Annual Conference of the IEEE Industrial Electronics Society, 2023

Design and Dynamic Analysis of a Two-Degree-of-Freedom Pneumatic-Electromagnetic Hybrid Actuator Using Bellows Pneumatic Actuator.
Proceedings of the 49th Annual Conference of the IEEE Industrial Electronics Society, 2023

2022
Three-Degree-of-Freedom Voice Coil Actuator Driven by a Four-Phase Current.
Sensors, 2022

2020
Experimental Verification of Three-Degree-of-Freedom Electromagnetic Actuator for Image Stabilization.
Sensors, 2020

2019
A Magnetically Levitated Lead Screw for Complete Non-Contact Power Transmission.
Proceedings of the IECON 2019, 2019

2016
Low-Temperature Activation in Boron Ion-Implanted Silicon by Soft X-Ray Irradiation.
IEICE Trans. Electron., 2016

Development of instantaneously puncture system for CT fluoroscopy-guided Interventional Radiology.
Proceedings of the 2016 IEEE/RSJ International Conference on Intelligent Robots and Systems, 2016

2014
Improvement of Hump Phenomenon of Thin-Film Transistor by SiN<sub>X</sub> Film.
IEICE Trans. Electron., 2014

Study of charge retention mechanism for DNA memory FET.
IEICE Electron. Express, 2014

2011
Dependence of electrical properties of pentacene Thin-Film Transistor on active layer thickness.
IEICE Electron. Express, 2011

2010
Properties of SiO<sub>2</sub> Surface and Pentacene OTFT Subjected to Atomic Hydrogen Annealing.
IEICE Trans. Electron., 2010

2007
Fabrication of tunneling dielectric thin-film transistor with very thin SiN<sub>x</sub> films onto source and drain.
IEICE Electron. Express, 2007


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