Alain Bensoussan

Orcid: 0000-0003-0743-498X

Affiliations:
  • Thales Alenia Space, Toulouse, France


According to our database1, Alain Bensoussan authored at least 6 papers between 2015 and 2023.

Collaborative distances:
  • Dijkstra number2 of six.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
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Links

Online presence:

On csauthors.net:

Bibliography

2023
The Correct Hot Carrier Degradation Model.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

2018
Effect of HTRB lifetest on AlGaN/GaN HEMTs under different voltages and temperatures stresses.
Microelectron. Reliab., 2018

Temperature and voltage effects on HTRB and HTGB stresses for AlGaN/GaN HEMTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017
Reliability prediction with MTOL.
Microelectron. Reliab., 2017

2016
How to quantify and predict long term multiple stress operation: Application to Normally-Off Power GaN transistor technologies.
Microelectron. Reliab., 2016

2015
A methodologic project to characterize and model COTS component reliability.
Microelectron. Reliab., 2015


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