L. Théolier

According to our database, L. Théolier authored at least 9 papers between 2008 and 2018.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2018

Effect of HTRB lifetest on AlGaN/GaN HEMTs under different voltages and temperatures stresses.

Omar Chihani, L. Théolier, Alain Bensoussan, Jean-Yves Delétage, André Durier, Eric Woirgard

Microelectron. Reliab., 2018

Temperature and voltage effects on HTRB and HTGB stresses for AlGaN/GaN HEMTs.

Omar Chihani, Loic Théolier, Jean-Yves Delétage, Eric Woirgard, Alain Bensoussan, André Durier

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

Lifetime of power electronics interconnections in accelerated test conditions: High temperature storage and thermal cycling.

Wissam Sabbah, Faical Arabi, Oriol Avino-Salvado, Cyril Buttay, L. Théolier, Hervé Morel

Microelectron. Reliab., 2017

2016

Power electronic assemblies: Thermo-mechanical degradations of gold-tin solder for attaching devices.

Faical Arabi, Loic Théolier, Donatien Martineau, Jean-Yves Delétage, M. Medina, Eric Woirgard

Microelectron. Reliab., 2016

2015

Identification and analysis of power substrates degradations subjected to severe aging tests.

Eric Woirgard, Faical Arabi, Wissam Sabbah, Donatien Martineau, L. Théolier, Stephane Azzopardi

Microelectron. Reliab., 2015

Ageing mechanisms in Deep Trench Termination (DT²) Diode.

F. Baccar, Houssam Arbess, L. Théolier, Stephane Azzopardi, Eric Woirgard

Microelectron. Reliab., 2015

Mechanical stress investigation after technological process in Deep Trench Termination DT² using BenzoCycloButene as dielectric material.

Houssam Arbess, F. Baccar, L. Théolier, Stephane Azzopardi, Eric Woirgard

Microelectron. Reliab., 2015

2013

Electrical characterization under mechanical stress at various temperatures of PiN power diodes in a health monitoring approach.

F. Baccar, Stephane Azzopardi, L. Théolier, K. El Boubkari, Jean-Yves Delétage, Eric Woirgard

Microelectron. Reliab., 2013

2008

Switching performance of 65 V vertical N-channel FLYMOSFETs.

L. Théolier, Karine Isoird, H. Tranduc, Frederic Morancho, Jaume Roig, Yann Weber, Evgueniy N. Stefanov, Jean-Michel Reynes

Microelectron. J., 2008