Behrouz Afzal

According to our database, Behrouz Afzal authored at least 3 papers between 2012 and 2013.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2013

An analytical model for read static noise margin including soft oxide breakdown, negative and positive bias temperature instabilities.

Behrouz Afzal, Behzad Ebrahimi, Ali Afzali-Kusha, Hamid Mahmoodi

Microelectron. Reliab., 2013

2012

Modeling read SNM considering both soft oxide breakdown and negative bias temperature instability.

Behrouz Afzal, Behzad Ebrahimi, Ali Afzali-Kusha, Hamid Mahmoodi

Microelectron. Reliab., 2012

An accurate analytical I-V model for sub-90-nm MOSFETs and its application to read static noise margin modeling.

Behrouz Afzal, Behzad Ebrahimi, Ali Afzali-Kusha, Massoud Pedram

J. Zhejiang Univ. Sci. C, 2012