Behzad Ebrahimi
Orcid: 0000-0002-1754-435X
According to our database1,
Behzad Ebrahimi
authored at least 22 papers
between 2007 and 2023.
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Bibliography
2023
Circuits Syst. Signal Process., July, 2023
2022
A 1-GHz GC-eDRAM in 7-nm FinFET with static retention time at 700 mV for ultra-low power on-chip memory applications.
Int. J. Circuit Theory Appl., 2022
2021
HPM: High-Precision Modeling of a Low-Power Inverter-Based Memristive Neural Network.
J. Circuits Syst. Comput., 2021
Circuits Syst. Signal Process., 2021
2019
Low-power data encoding/decoding for energy-efficient static random access memory design.
IET Circuits Devices Syst., 2019
2016
Read static noise margin aging model considering SBD and BTI effects for FinFET SRAMs.
Microelectron. Reliab., 2016
2015
A near-threshold 7T SRAM cell with high write and read margins and low write time for sub-20 nm FinFET technologies.
Integr., 2015
A FinFET SRAM cell design with BTI robustness at high supply voltages and high yield at low supply voltages.
Int. J. Circuit Theory Appl., 2015
High-performance and high-yield 5 nm underlapped FinFET SRAM design using P-type access transistors.
Proceedings of the Sixteenth International Symposium on Quality Electronic Design, 2015
2014
Microelectron. Reliab., 2014
2013
An analytical model for read static noise margin including soft oxide breakdown, negative and positive bias temperature instabilities.
Microelectron. Reliab., 2013
Proceedings of the 8th International Conference on Design & Technology of Integrated Systems in Nanoscale Era, 2013
2012
Probability calculation of read failures in nano-scaled SRAM cells under process variations.
Microelectron. Reliab., 2012
Modeling read SNM considering both soft oxide breakdown and negative bias temperature instability.
Microelectron. Reliab., 2012
An accurate analytical I-V model for sub-90-nm MOSFETs and its application to read static noise margin modeling.
J. Zhejiang Univ. Sci. C, 2012
IEICE Electron. Express, 2012
2011
IEEE Trans. Very Large Scale Integr. Syst., 2011
A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement.
Microelectron. Reliab., 2011
2010
A Microfabricated Phantom for Quantitative MR Perfusion Measurements: Validation of Singular Value Decomposition Deconvolution Method.
IEEE Trans. Biomed. Eng., 2010
2008
Proceedings of the IEEE Computer Society Annual Symposium on VLSI, 2008
2007
The effect of noise and depolarization on hyperpolarized tracers perfusion assessment.
Proceedings of the 2007 IEEE International Symposium on Biomedical Imaging: From Nano to Macro, 2007