Buvna Ayyagari-Sangamalli

According to our database, Buvna Ayyagari-Sangamalli authored at least 6 papers between 2019 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Bulk-Switching Memristor-based Compute-In-Memory Module for Deep Neural Network Training.

Yuting Wu, Qiwen Wang, Ziyu Wang, Xinxin Wang, Buvna Ayyagari, Siddarth A. Krishnan, Michael Chudzik, Wei D. Lu

CoRR, 2023

BEOL Interconnect Innovation: Materials, Process and Systems Co-optimization for 3nm Node and Beyond.

Gaurav Thareja, Ashish Pal, Xingye Wang, Sefa Dag, Shi You, Shashank Sharma, Qing Zhu, Carmen L. Cervantes, Shinjae Hwang, Matthew Spuller, Ben Ng, Pradeep S. Kumar, Norman Tam, Max Gage, Sameer Deshpande, Zhiyuan Wu, Alexander Jansen, Liton Dey, Feng Chen, Xianjin Xie, Keyvan Kashefizadeh, Vinod Reddy, Andy Lo, Zhebo Chen, Sidney Huey, Jianshe Tang, He Ren, Mehul Naik, Brian Brown, Sree Kesapragada, Buvna Ayyagari-Sangamalli, El Mehdi Bazizi, Xianmin Tang

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2022

A Fully Integrated System-on-Chip Design with Scalable Resistive Random-Access Memory Tile Design for Analog in-Memory Computing.

Fuxi Cai, She-Hwa Yen, Apurva Uppala, Luke Thomas, Tianchi Liu, Peter Fu, Xiaofeng Zhang, Ambrose Low, Deepak Kamalanathan, Joe Hsu, Buvna Ayyagari-Sangamalli

Adv. Intell. Syst., 2022

2021

Integration scheme for 3D NAND with nonreplacement word line and its cell characteristics investigation.

Liu Jiang, Chang Seok Kang, Ashish Pal, El Mehdi Bazizi, Tomohiko Kitajima, Nancy Fung, Gabriela Alva, Amy Child, Bhaskar Bhuyan, Takehito Koshizawa, Sung-Kwan Kang, Gill Lee, David Hwang, Blessy Alexander, Buvna Ayyagari

Proceedings of the IEEE International Memory Workshop, 2021

2020

Modeling and Optimization of Advanced 3D NAND Memory.

Mehdi Saremi, Ashish Pal, Liu Jiang, El Mehdi Bazizi, Helen Lee, Xi-Wei Lin, Blessy Alexander, Buvna Ayyagari-Sangamalli

Proceedings of the 2020 Device Research Conference, 2020

2019

Highly-Doped Through-Contact Silicon Epi Design at 3 nm node.

Sushant Mittal, Ashish Pal, Mehdi Saremi, J. Ferrell, M. Haverty, T. Miyashita, N. Kim, El Mehdi Bazizi, Blessy Alexander, A. B. Sachid, Buvna Ayyagari

Proceedings of the Device Research Conference, 2019