C. Bouexière

According to our database, C. Bouexière authored at least 2 papers between 2013 and 2017.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2017

Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imaging.

Jean-Guy Tartarin, O. Lazar, D. Saugnon, Benoit Lambert, C. Moreau, C. Bouexière, E. Romain-Latu, K. Rousseau, A. David, J.-L. Roux

Microelectron. Reliab., 2017

2013

Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements.

S. Karboyan, Jean-Guy Tartarin, M. Rzin, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, M. Mermoux, E. Romain-Latu, F. Thomas, C. Bouexière, C. Moreau

Microelectron. Reliab., 2013