D. Carisetti

According to our database, D. Carisetti authored at least 7 papers between 2002 and 2013.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2013

Failure analysis of GaAs microwave devices with plastic encapsulation by electro-optical techniques.

W. Ben Naceur, Nathalie Malbert, Nathalie Labat, Hélène Frémont, D. Carisetti, J. C. Clement, J. L. Muraro, Barbara Bonnet

Microelectron. Reliab., 2013

Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements.

S. Karboyan, Jean-Guy Tartarin, M. Rzin, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, M. Mermoux, E. Romain-Latu, F. Thomas, C. Bouexière, C. Moreau

Microelectron. Reliab., 2013

Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress.

Laurent Brunel, Benoit Lambert, P. Mezenge, J. Bataille, D. Floriot, Jan Grünenpütt, Hervé Blanck, D. Carisetti, Y. Gourdel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat

Microelectron. Reliab., 2013

2010

Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations.

Mustapha Faqir, Mohsine Bouya, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, Giovanni Verzellesi, Fausto Fantini

Microelectron. Reliab., 2010

2008

Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques.

Mohsine Bouya, Nathalie Malbert, Nathalie Labat, D. Carisetti, Philippe Perdu, J. C. Clement, Benoit Lambert, M. Bonnet

Microelectron. Reliab., 2008

2007

Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC.

Mohsine Bouya, D. Carisetti, Nathalie Malbert, Nathalie Labat, Philippe Perdu, J. C. Clement, M. Bonnet, G. Pataut

Microelectron. Reliab., 2007

2002

Backside Defect Localizations and Revelations Techniques on Gallium Arsenide (GaAs) Devices.

Felix Beaudoin, D. Carisetti, Romain Desplats, Philippe Perdu, Dean Lewis, J. C. Clement

Microelectron. Reliab., 2002