Donghyuk Yun

According to our database, Donghyuk Yun authored at least 5 papers between 2016 and 2021.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2021

Exploitations of Multiple Rows Hammering and Retention Time Interactions in DRAM Using X-Ray Radiation.

Donghyuk Yun, Myungsang Park, GeunYong Bak, Sanghyeon Baeg, Shi-Jie Wen

IEEE Access, 2021

2018

Study of proton radiation effect to row hammer fault in DDR4 SDRAMs.

Chul Seung Lim, Kyungbae Park, GeunYong Bak, Donghyuk Yun, Myungsang Park, Sanghyeon Baeg, Shi-Jie Wen, Richard Wong

Microelectron. Reliab., 2018

Study of TID effects on one row hammering using gamma in DDR4 SDRAMs.

Donghyuk Yun, Myungsang Park, Chul Seung Lim, Sanghyeon Baeg

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2016

Statistical distributions of row-hammering induced failures in DDR3 components.

Kyungbae Park, Donghyuk Yun, Sanghyeon Baeg

Microelectron. Reliab., 2016

Experiments and root cause analysis for active-precharge hammering fault in DDR3 SDRAM under 3 × nm technology.

Kyungbae Park, Chul Seung Lim, Donghyuk Yun, Sanghyeon Baeg

Microelectron. Reliab., 2016