Eknath Sarkar

According to our database, Eknath Sarkar authored at least 5 papers between 2023 and 2025.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2025

Radiation-Resilient Amorphous Indium Oxide FEFETs for Embedded Nonvolatile Memory.

Sharadindu Gopal Kirtania, Faaiq G. Waqar, Dyutimoy Chakraborty, Jaewon Shin, Eknath Sarkar, Justin Reiss, Jason Dean Yeager, Douglas E. Wolfe, Shimeng Yu, Suman Datta

Proceedings of the IEEE International Reliability Physics Symposium, 2025

Analog In-Memory-Compute with Multi-bit Silicon Ferro FinFET Array for Improved Energy and Area Efficiency.

Eknath Sarkar, Dyutimoy Chakraborty, Wei-Chun Wang, Khandker Akif Aabrar, Sharadindu Gopal Kirtania, Omkar Phadke, Chengyang Zhang, Emmanuel Quezada, Jaewon Shin, Shida Zhang, Asif Islam Khan, Shimeng Yu, Saibal Mukhopadhyay, Suman Datta

Proceedings of the IEEE International Memory Workshop, 2025

2024

Amorphous Oxide Semiconductors for Monolithic 3D Integrated Circuits.

Suman Datta, Eknath Sarkar, Khandker Akif Aabrar, Shan Deng, Jaewon Shin, Arijit Raychowdhury, Shimeng Yu, Asif Khan

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

On the Reliability of High-Performance Dual Gate (DG) W-Doped In2O3 FET.

Khandker Akif Aabrar, Hyeonwoo Park, Sharadindu Gopal Kirtania, Eknath Sarkar, Md Abdullah Al Mamun, Sunbin Deng, Chengyang Zhang, Gilbert B. Rayner, Kyeongjae Cho, Suman Datta

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2023

First Demonstration of a-IGZO GAA Nanosheet FETs Featuring Achievable SS=61mV/dec, Ioff<10^-7 μA/μm, DIBL =44mV/V, Positive VT, and Process Temp. of 300 °C.

Jih-Chao Chiu, Eknath Sarkar, Yuan-Ming Liu, Yu-Ciao Chen, Yu-Cheng Fan, C. W. Liu

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023