Erwin Yu

According to our database, Erwin Yu authored at least 4 papers between 2008 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of three.

2024

13.7 A 1Tb Density 3b/Cell 3D-NAND Flash on a 2YY-Tier Technology with a 300MB/s Write Throughput.

Koichi Kawai, Yuichi Einaga, Yoko Oikawa, Yankang He, Biagio Iorio, Shigekazu Yamada, Yoshihiko Kamata, Tomoko Iwasaki, Andrea D'Alessandro, Erwin Yu, Arvind Muralidharan, Qinge Li, Henry Nguyen, Kim-Fung Chan, Michele Piccardi, Takaaki Ichikawa, Jeff Yu, Guan Wang, Kwangwon Kim, Chulbum Kim, Paolo Mangalindan, Hojung Yun, Luca Nubile, Kapil Verma, Sushanth Bhushan, Dheeraj Srinivasan, Hidehiko Kuge, Rajesh Subramanian, Jiro Kishimoto, Toru Kamijo, Padma Musunuri, Chang Siau, Ramin Ghodsi

Proceedings of the IEEE International Solid-State Circuits Conference, 2024

2022

A 1-Tb Density 4b/Cell 3D-NAND Flash on 176-Tier Technology with 4-Independent Planes for Read using CMOS-Under-the-Array.

Ted Pekny, Luyen Vu, Jeff Tsai, Dheeraj Srinivasan, Erwin Yu, Jonathan Pabustan, Joe Xu, Srinivas Deshmukh, Kim-Fung Chan, Michael Piccardi, Kevin Xu, Guan Wang, Kaveh Shakeri, Vipul Patel, Tomoko Iwasaki, Tongji Wang, Padma Musunuri, Carl Gu, Ali Mohammadzadeh, Ali Ghalam, Violante Moschiano, Tommaso Vali, Jae-Kwan Park, June Lee, Ramin Ghodsi

Proceedings of the IEEE International Solid-State Circuits Conference, 2022

2016

7.7 A 768Gb 3b/cell 3D-floating-gate NAND flash memory.

Tomoharu Tanaka, Mark Helm, Tommaso Vali, Ramin Ghodsi, Koichi Kawai, Jae-Kwan Park, Shigekazu Yamada, Feng Pan, Yuichi Einaga, Ali Ghalam, Toru Tanzawa, Jason Guo, Takaaki Ichikawa, Erwin Yu, Satoru Tamada, Tetsuji Manabe, Jiro Kishimoto, Yoko Oikawa, Yasuhiro Takashima, Hidehiko Kuge, Midori Morooka, Ali Mohammadzadeh, Jong Kang, Jeff Tsai, Emanuele Sirizotti, Eric Lee, Luyen Vu, Yuxing Liu, Hoon Choi, Kwonsu Cheon, Daesik Song, Daniel Shin, Jung Hee Yun, Michele Piccardi, Kim-Fung Chan, Yogesh Luthra, Dheeraj Srinivasan, Srinivasarao Deshmukh, Kalyan Kavalipurapu, Dan Nguyen, Girolamo Gallo, Sumant Ramprasad, Michelle Luo, Qiang Tang, Michele Incarnati, Agostino Macerola, Luigi Pilolli, Luca De Santis, Massimo Rossini, Violante Moschiano, Giovanni Santin, Bernardino Tronca, Hyunseok Lee, Vipul Patel, Ted Pekny, Aaron Yip, Naveen Prabhu, Purval Sule, Trupti Bemalkhedkar, Kiranmayee Upadhyayula, Camila Jaramillo

Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016

2008

A 50nm 8Gb NAND Flash Memory with 100MB/s Program Throughput and 200MB/s DDR Interface.

Dean Nobunaga, Ebrahim Abedifard, Frankie Roohparvar, June Lee, Erwin Yu, Allahyar Vahidimowlavi, Michael Abraham, Sanjay Talreja, Rajesh Sundaram, Rod Rozman, Luyen Vu, Chih-Liang Chen, Uday Chandrasekhar, Rupinder Bains, Vimon Viajedor, William Mak, Munseork Choi, Darshak Udeshi, Michelle Luo, Shahid Qureshi, Jeffrey Tsai, Frederick Jaffin, Yujiang Liu, Marco Mancinelli

Proceedings of the 2008 IEEE International Solid-State Circuits Conference, 2008