Jiro Kishimoto

According to our database, Jiro Kishimoto authored at least 5 papers between 2001 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of three.

2024

13.7 A 1Tb Density 3b/Cell 3D-NAND Flash on a 2YY-Tier Technology with a 300MB/s Write Throughput.

Koichi Kawai, Yuichi Einaga, Yoko Oikawa, Yankang He, Biagio Iorio, Shigekazu Yamada, Yoshihiko Kamata, Tomoko Iwasaki, Andrea D'Alessandro, Erwin Yu, Arvind Muralidharan, Qinge Li, Henry Nguyen, Kim-Fung Chan, Michele Piccardi, Takaaki Ichikawa, Jeff Yu, Guan Wang, Kwangwon Kim, Chulbum Kim, Paolo Mangalindan, Hojung Yun, Luca Nubile, Kapil Verma, Sushanth Bhushan, Dheeraj Srinivasan, Hidehiko Kuge, Rajesh Subramanian, Jiro Kishimoto, Toru Kamijo, Padma Musunuri, Chang Siau, Ramin Ghodsi

Proceedings of the IEEE International Solid-State Circuits Conference, 2024

2016

7.7 A 768Gb 3b/cell 3D-floating-gate NAND flash memory.

Tomoharu Tanaka, Mark Helm, Tommaso Vali, Ramin Ghodsi, Koichi Kawai, Jae-Kwan Park, Shigekazu Yamada, Feng Pan, Yuichi Einaga, Ali Ghalam, Toru Tanzawa, Jason Guo, Takaaki Ichikawa, Erwin Yu, Satoru Tamada, Tetsuji Manabe, Jiro Kishimoto, Yoko Oikawa, Yasuhiro Takashima, Hidehiko Kuge, Midori Morooka, Ali Mohammadzadeh, Jong Kang, Jeff Tsai, Emanuele Sirizotti, Eric Lee, Luyen Vu, Yuxing Liu, Hoon Choi, Kwonsu Cheon, Daesik Song, Daniel Shin, Jung Hee Yun, Michele Piccardi, Kim-Fung Chan, Yogesh Luthra, Dheeraj Srinivasan, Srinivasarao Deshmukh, Kalyan Kavalipurapu, Dan Nguyen, Girolamo Gallo, Sumant Ramprasad, Michelle Luo, Qiang Tang, Michele Incarnati, Agostino Macerola, Luigi Pilolli, Luca De Santis, Massimo Rossini, Violante Moschiano, Giovanni Santin, Bernardino Tronca, Hyunseok Lee, Vipul Patel, Ted Pekny, Aaron Yip, Naveen Prabhu, Purval Sule, Trupti Bemalkhedkar, Kiranmayee Upadhyayula, Camila Jaramillo

Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016

2010

A temperature compensation word-line voltage generator for multi-level cell NAND Flash memories.

Toru Tanzawa, Tomoharu Tanaka, Satoru Tamada, Jiro Kishimoto, Sjigekazu Yamada, Koichi Kawai, Takaaki Ichikawa, P. Chiang, Frank Roohparvar

Proceedings of the 36th European Solid-State Circuits Conference, 2010

2009

A 172mm² 32Gb MLC NAND flash memory in 34nm CMOS.

Raymond Zeng, Navneet Chalagalla, Dan Chu, Daniel Elmhurst, Matt Goldman, Chris Haid, Atif Huq, Takaaki Ichikawa, Joel Jorgensen, Owen Jungroth, Nishnat Kajla, Ravinder Kajley, Koichi Kawai, Jiro Kishimoto, Ali Madraswala, Tetsuji Manabe, Vikram Mehta, Midori Morooka, Katie Nguyen, Yoko Oikawa, Bharat Pathak, Rod Rozman, Tom Ryan, Andy Sendrowski, William Sheung, Martin Szwarc, Yasuhiro Takashima, Satoru Tamada, Toru Tanzawa, Tomoharu Tanaka, Mase Taub, Darshak Udeshi, Sjigekazu Yamada, Hiroyuki Yokoyama

Proceedings of the IEEE International Solid-State Circuits Conference, 2009

2001

A 126.6-mm² AND-type 512-Mb flash memory with 1.8-V power supply.

Tatsuya Ishii, Kazuyoshi Oshima, Hiroshi Sato, Satoshi Noda, Jiro Kishimoto, Hiroaki Kotani, Atsushi Nozoe, Kazunori Furusawa, Takayuki Yoshitake, Masataka Kato, Masahito Takahashi, Akihiko Sato, Shoji Kubono, Kiichi Manita, Kenji Koda, Takeshi Nakayama, Akira Hosogane

IEEE J. Solid State Circuits, 2001