Francis Balestra

According to our database, Francis Balestra authored at least 16 papers between 2000 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

Experimental Study of Self-Heating Effect in InGaAs HEMTs for Quantum Technologies Down to 10K.

F. Serra Di Santa Maria, Francis Balestra, Christoforos G. Theodorou, Gérard Ghibaudo, Cezar B. Zota, Eunjung Cha

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to cryogenic temperatures for low-power quantum applications.

F. Serra Di Santa Maria, Christoforos G. Theodorou, Francis Balestra, Gérard Ghibaudo, Eunjung Cha, Cezar B. Zota

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

2021

Status and trends in Nanoelectronic devices for the ultimate integration of ICs.

Francis Balestra

Proceedings of the 14th IEEE International Conference on ASIC, 2021

2019

Nanoscale Devices for the end of the Roadmap.

Francis Balestra

Proceedings of the 13th IEEE International Conference on ASIC, 2019

2017

Development and application of the Oxide Stress Separation technique for the measurement of ONO leakage currents at low electric fields in 40 nm floating gate embedded-flash memory.

Adam Dobri, Simon Jeannot, Fausto Piazza, Carine Jahan, Jean Coignus, Luca Perniola, Francis Balestra

Microelectron. Reliab., 2017

Ultra low power and high performance nanoelectronic devices.

Francis Balestra

Proceedings of the 12th IEEE International Conference on ASIC, 2017

2012

New parameter extraction method based on split C-V for FDSOI MOSFETs.

Imed Ben Akkez, Antoine Cros, Claire Fenouillet-Béranger, Frédéric Boeuf, Quentin Rafhay, Francis Balestra, Gérard Ghibaudo

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2009

Investigation of defects introduced by static and dynamic hot carrier stress on SOI partially depleted body-contact MOSFETs.

M. A. Exarchos, George J. Papaioannou, Jalal Jomaah, Francis Balestra

Microelectron. Reliab., 2009

2006

On the drain current saturation in short channel MOSFETs.

A. Benfdila, Francis Balestra

Microelectron. J., 2006

2005

The impact of static and dynamic degradation on SOI "smart-cut" floating body MOSFETs.

M. A. Exarchos, George J. Papaioannou, Jalal Jomaah, Francis Balestra

Microelectron. Reliab., 2005

2004

On the defects introduced by AC and DC hot carrier stress in SOI PD MOSFETs.

M. A. Exarchos, François Dieudonné, Jalal Jomaah, George J. Papaioannou, Francis Balestra

Microelectron. Reliab., 2004

2003

Low frequency noise in 0.12 mum partially and fully depleted SOI technology.

François Dieudonné, Sébastien Haendler, Jalal Jomaah, Francis Balestra

Microelectron. Reliab., 2003

2002

Origin of hot carrier degradation in advanced nMOSFET devices.

B. Cretu, Francis Balestra, Gérard Ghibaudo, G. Guégan

Microelectron. Reliab., 2002

2001

Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors.

Sébastien Haendler, Jalal Jomaah, Gérard Ghibaudo, Francis Balestra

Microelectron. Reliab., 2001

An overview of hot-carrier induced degradation in 0.25 mum Partially and Fully Depleted SOI N-MOSFET's.

François Dieudonné, F. Daugé, Jalal Jomaah, C. Raynaud, Francis Balestra

Microelectron. Reliab., 2001

2000

0.25 μm SOI technologies performance for low-power radio-frequency applications.

O. Rozeau, Sébastien Haendler, Jalal Jomaah, J. Boussey, Francis Balestra, C. Raynaud, J. L. Pelloie

Proceedings of the 2000 7th IEEE International Conference on Electronics, 2000