Sébastien Haendler

According to our database, Sébastien Haendler authored at least 16 papers between 2000 and 2021.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2021

Circuit-level evaluation of a new zero-cost transistor in an embedded non-volatile memory CMOS technology.

Paul Devoge, Hassen Aziza, Philippe Lorenzini, Franck Julien, Abderrezak Marzaki, Alexandre Malherbe, Marc Mantelli, Thomas Sardin, Sébastien Haendler, Arnaud Régnier, Stephan Niel

Proceedings of the 16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era, 2021

2019

28nm FDSOI Platform with Embedded PCM for IoT, ULP, Digital, Analog, Automotive and others Applications.

Franck Arnaud, Sébastien Haendler, Sylvain Clerc, Rossella Ranica, Anna Gandolfo, Olivier Weber

Proceedings of the 49th European Solid-State Device Research Conference, 2019

2018

Reliability assessment of 4GSP/s interleaved SAR ADC.

Rania Lajmi, Florian Cacho, O. David, Jean-Pierre Blanc, Emmanuel Rouat, Sébastien Haendler, Ph. Benech, Estelle Lauga-Larroze, Sylvain Bourdel

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

Characterization, modeling and comparison of 1/f noise in Si/SiGe: C HBTs issued from three advanced BiCMOS technologies.

Marcelino Seif, Fabien Pascal, Bruno Sagnes, J. Elbeyrouthy, Alain Hoffmann, Sébastien Haendler, Pascal Chevalier, Daniel Gloria

Proceedings of the 29th International Conference on Microelectronics, 2017

2016

28nm FDSOI technology sub-0.6V SRAM Vmin assessment for ultra low voltage applications.

Rossella Ranica, Nicolas Planes, Vincent Huard, Olivier Weber, Daniel Noblet, Damien Croain, Fabien Giner, Sylvie Naudet, P. Mergault, S. Ibars, A. Villaret, Maryline Parra, Sébastien Haendler, M. Quoirin, Florian Cacho, C. Julien, F. Terrier, Lorenzo Ciampolini, David Turgis, Christophe Lecocq, Franck Arnaud

Proceedings of the 2016 IEEE Symposium on VLSI Circuits, 2016

2015

New LFN and RTN analysis methodology in 28 and 14nm FD-SOI MOSFETs.

Christoforos G. Theodorou, Eleftherios G. Ioannidis, Sébastien Haendler, Nicolas Planes, Emmanuel Josse, Charalambos A. Dimitriadis, Gérard Ghibaudo

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014

Dispersion study of DC and Low Frequency Noise in SiGe: C Heterojunction Bipolar Transistors used for mm-Wave to Terahertz applications.

Marcelino Seif, Fabien Pascal, Bruno Sagnes, Alain Hoffmann, Sébastien Haendler, Pascal Chevalier, Daniel Gloria

Microelectron. Reliab., 2014

Study of low frequency noise in advanced SiGe: C heterojunction bipolar transistors.

Marcelino Seif, Fabien Pascal, Bruno Sagnes, Alain Hoffmann, Sébastien Haendler, Pascal Chevalier, Daniel Gloria

Proceedings of the 44th European Solid State Device Research Conference, 2014

Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs.

Eleftherios G. Ioannidis, Sébastien Haendler, Christoforos G. Theodorou, Nicolas Planes, C. A. Dimitriadis, Gérard Ghibaudo

Proceedings of the 44th European Solid State Device Research Conference, 2014

2013

6T SRAM performance and power gain using double gate MOS in 28nm FDSOI technology.

Vivek Asthana, Malathi Kar, Jean Jimenez, Sébastien Haendler, Philippe Galy

Proceedings of 2013 International Conference on IC Design & Technology, 2013

Circuit optimization of 4T, 6T, 8T, 10T SRAM bitcells in 28nm UTBB FD-SOI technology using back-gate bias control.

Vivek Asthana, Malathi Kar, Jean Jimenez, Jean-Philippe Noel, Sébastien Haendler, Philippe Galy

Proceedings of the ESSCIRC 2013, 2013

2012

Impact of front-back gate coupling on low frequency noise in 28 nm FDSOI MOSFETs.

Christoforos G. Theodorou, Eleftherios G. Ioannidis, Sébastien Haendler, Nicolas Planes, Franck Arnaud, Jalal Jomaah, Charalambos A. Dimitriadis, Gérard Ghibaudo

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2009

Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below.

Claire Fenouillet-Béranger, P. Perreau, S. Denorme, L. Tosti, François Andrieu, Olivier Weber, S. Barnola, C. Arvet, Y. Campidelli, Sébastien Haendler, R. Beneyton, C. Perrot, C. de Buttet, P. Gros, L. Pham-Nguyen, F. Leverd, P. Gouraud, F. Abbate, F. Baron, A. Torres, C. Laviron, L. Pinzelli, J. Vetier, C. Borowiak, A. Margain, D. Delprat, F. Boedt, Konstantin Bourdelle, Bich-Yen Nguyen, Olivier Faynot, Thomas Skotnicki

Proceedings of the 35th European Solid-State Circuits Conference, 2009

2003

Low frequency noise in 0.12 mum partially and fully depleted SOI technology.

François Dieudonné, Sébastien Haendler, Jalal Jomaah, Francis Balestra

Microelectron. Reliab., 2003

2001

Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors.

Sébastien Haendler, Jalal Jomaah, Gérard Ghibaudo, Francis Balestra

Microelectron. Reliab., 2001

2000

0.25 μm SOI technologies performance for low-power radio-frequency applications.

O. Rozeau, Sébastien Haendler, Jalal Jomaah, J. Boussey, Francis Balestra, C. Raynaud, J. L. Pelloie

Proceedings of the 2000 7th IEEE International Conference on Electronics, 2000