Fumio Horiguchi

According to our database, Fumio Horiguchi authored at least 6 papers between 1989 and 2017.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2017

A Comprehensive Model for Write Disturbance in Resistive Memory Composed of Cross-Point Array.

Yoshiaki Asao, Fumio Horiguchi

IEICE Trans. Electron., 2017

2016

A Precise Model for Cross-Point Memory Array.

Yoshiaki Asao, Fumio Horiguchi

IEICE Trans. Electron., 2016

2006

Special Section on Fundamental and Application of Advanced Semiconductor Devices.

Fumio Horiguchi

IEICE Trans. Electron., 2006

Model study of environmental concentrations of TBT in Tokyo Bay - development of a Windows^reg version prototype.

Fumio Horiguchi, Joji Yamamoto, Kisaburo Nakata

Environ. Model. Softw., 2006

1991

A 33-ns 64-Mb DRAM.

Yukihito Oowaki, Kenji Tsuchida, Yohji Watanabe, Daisaburo Takashima, Masako Ohta, Hiroaki Nakano, Shigeyoshi Watanabe, Akihiro Nitayama, Fumio Horiguchi, Kazunori Ohuchi, Fujio Masuoka

IEEE J. Solid State Circuits, November, 1991

1989

An experimental 16-Mbit CMOS DRAM chip with a 100-MHz serial read/write mode.

Shigeyoshi Watanabe, Yukihito Oowaki, Yasuo Itoh, Koji Sakui, Kenji Numata, Tsuneaki Fuse, Takayuki Kobayashi, Kenji Tsuchida, Masahiko Chiba, Takahiko Hara, Masako Ohta, Fumio Horiguchi, Katsuhiko Hieda, Akihiro Nitayama, Takeshi Hamamoto, Kazunori Ohuchi, Fujio Masuoka

IEEE J. Solid State Circuits, June, 1989