Takeshi Hamamoto

According to our database, Takeshi Hamamoto authored at least 14 papers between 1996 and 2018.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2018

Evaluation methodology for current collapse phenomenon of GaN HEMTs.

Toru Sugiyama, Kohei Oasa, Yasunobu Saito, Akira Yoshioka, Takuo Kikuchi, Aya Shindome, Tatsuya Ohguro, Takeshi Hamamoto

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2011

A Scalable Shield-Bitline-Overdrive Technique for Sub-1.5 V Chain FeRAMs.

Daisaburo Takashima, Hidehiro Shiga, Daisuke Hashimoto, Tadashi Miyakawa, Shinichiro Shiratake, Katsuhiko Hoya, Ryu Ogiwara, Ryosuke Takizawa, Ryosuke Doumae, Ryo Fukuda, Yohji Watanabe, Shuso Fujii, Tohru Ozaki, Hiroyuki Kanaya, Susumu Shuto, Koji Yamakawa, Iwao Kunishima, Takeshi Hamamoto, Akihiro Nitayama

IEEE J. Solid State Circuits, 2011

2010

A 1.6 GB/s DDR2 128 Mb Chain FeRAM With Scalable Octal Bitline and Sensing Schemes.

Hidehiro Shiga, Daisaburo Takashima, Shinichiro Shiratake, Katsuhiko Hoya, Tadashi Miyakawa, Ryu Ogiwara, Ryo Fukuda, Ryosuke Takizawa, Kosuke Hatsuda, Fumiyoshi Matsuoka, Yasushi Nagadomi, Daisuke Hashimoto, Hisaaki Nishimura, Takeshi Hioka, Sumiko M. Doumae, Shoichi Shimizu, Mitsumo Kawano, Toyoki Taguchi, Yohji Watanabe, Shuso Fujii, Tohru Ozaki, Hiroyuki Kanaya, Yoshinori Kumura, Yoshiro Shimojo, Yuki Yamada, Yoshihiro Minami, Susumu Shuto, Koji Yamakawa, Soichi Yamazaki, Iwao Kunishima, Takeshi Hamamoto, Akihiro Nitayama, Tohru Furuyama

IEEE J. Solid State Circuits, 2010

A scalable shield-bitline-overdrive technique for 1.3V Chain FeRAM.

Daisaburo Takashima, Hidehiro Shiga, Daisuke Hashimoto, Tadashi Miyakawa, Shinichiro Shiratake, Katsuhiko Hoya, Ryu Ogiwara, Ryosuke Takizawa, Ryosuke Doumae, Ryo Fukuda, Yohji Watanabe, Shuso Fujii, Tohru Ozaki, Hiroyuki Kanaya, Susumu Shuto, Koji Yamakawa, Iwao Kunishima, Takeshi Hamamoto, Akihiro Nitayama

Proceedings of the IEEE International Solid-State Circuits Conference, 2010

2009

A 1.6GB/s DDR2 128Mb chain FeRAM with scalable octal bitline and sensing schemes.

Hidehiro Shiga, Daisaburo Takashima, Shinichiro Shiratake, Katsuhiko Hoya, Tadashi Miyakawa, Ryu Ogiwara, Ryo Fukuda, Ryosuke Takizawa, Kosuke Hatsuda, Fumiyoshi Matsuoka, Yasushi Nagadomi, Daisuke Hashimoto, Hisaaki Nishimura, Takeshi Hioka, Sumiko M. Doumae, Shoichi Shimizu, Mitsumo Kawano, Toyoki Taguchi, Yohji Watanabe, Shuso Fujii, Tohru Ozaki, Hiroyuki Kanaya, Yoshinori Kumura, Yoshiro Shimojo, Yuki Yamada, Yoshihiro Minami, Susumu Shuto, Koji Yamakawa, Soichi Yamazaki, Iwao Kunishima, Takeshi Hamamoto, Akihiro Nitayama, Tohru Furuyama

Proceedings of the IEEE International Solid-State Circuits Conference, 2009

2006

Design of a 128-mb SOI DRAM using the floating body cell (FBC).

Takashi Ohsawa, Katsuyuki Fujita, Kosuke Hatsuda, Tomoki Higashi, Tomoaki Shino, Yoshihiro Minami, Hiroomi Nakajima, Mutsuo Morikado, Kazumi Inoh, Takeshi Hamamoto, Shigeyoshi Watanabe, Shuso Fujii, Tohru Furuyama

IEEE J. Solid State Circuits, 2006

2005

Highly Flexible Row and Column Redundancy and Cycle Time Adaptive Read Data Path for Double Data Rate Synchronous Memories.

Kiyohiro Furutani, Takeshi Hamamoto, Takeo Miki, Masaya Nakano, Takashi Kono, Shigeru Kikuda, Yasuhiro Konishi, Tsutomu Yoshihara

IEICE Trans. Electron., 2005

2004

A 667-Mb/s operating digital DLL architecture for 512-Mb DDR SDRAM.

Takeshi Hamamoto, Kiyohiro Furutani, Takashi Kubo, Satoshi Kawasaki, Hironori Iga, Takashi Kono, Yasuhiro Konishi, Tsutomu Yoshihara

IEEE J. Solid State Circuits, 2004

2003

Effect of Cross-Language IR in Bilingual Lexicon Acquisition from Comparable Corpora.

Takehito Utsuro, Takashi Horiuchi, Takeshi Hamamoto, Kohei Hino, Takeaki Nakayama

Proceedings of the EACL 2003, 2003

2002

Semi-automatic Compilation of Bilingual Lexicon Entries from Cross-Lingually Relevant News Articles on WWW News Sites.

Takehito Utsuro, Takashi Horiuchi, Yasunobu Chiba, Takeshi Hamamoto

Proceedings of the Machine Translation: From Research to Real Users, 2002

2000

A 0.18-μm 256-Mb DDR-SDRAM with low-cost post-mold tuning method for DLL replica.

Shigehiro Kuge, Tetsuo Kato, Kiyohiro Furutani, Shigeru Kikuda, Katsuyoshi Mitsui, Takeshi Hamamoto, Jun Setogawa, Kei Hamade, Yuichiro Komiya, Satoshi Kawasaki, Takashi Kono, Teruhiko Amano, Takashi Kubo, Masaru Haraguchi, Yoshito Nakaoka, Mihoko Akiyama, Yasuhiro Konishi, Hideyuki Ozaki, Tsutomu Yoshihara

IEEE J. Solid State Circuits, 2000

A precharged-capacitor-assisted sensing (PCAS) scheme with novel level controllers for low-power DRAMs.

Takashi Kono, Takeshi Hamamoto, Katsuyoshi Mitsui, Yasuhiro Konishi, Tsutomu Yoshihara, Hideyuki Ozaki

IEEE J. Solid State Circuits, 2000

1998

400-MHz random column operating SDRAM techniques with self-skew compensation.

Takeshi Hamamoto, Masaki Tsukude, Kazutami Arimoto, Yasuhiro Konishi, Takayuki Miyamoto, Hideyuki Ozaki, Michihiro Yamada

IEEE J. Solid State Circuits, 1998

1996

Cell-plate-line/bit-line complementary sensing (CBCS) architecture for ultra low-power DRAMs.

Takeshi Hamamoto, Yoshikazu Maroaka, Mikio Asakura, Hideyuki Ozaki

IEEE J. Solid State Circuits, 1996