Gaëtan Toulon

According to our database, Gaëtan Toulon authored at least 4 papers between 2012 and 2020.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2020

Recessed and P-GaN Regrowth Gate Development for Normally-off AlGaN/GaN HEMTs.

Chaymaa Haloui, Gaëtan Toulon, Josiane Tasselli, Yvon Cordier, Éric Frayssinet, Karine Isoird, Frédéric Morancho, Mathieu Gavelle

Proceedings of the 27th International Conference on Mixed Design of Integrated Circuits and System, 2020

2018

A new electro-optical transmission-line measurement-method revealing a possible contribution of source and drain contact resistances to GaN HEMT dynamic on-resistance.

D. Hachem, David Trémouilles, Frederic Morancho, Gaëtan Toulon

Microelectron. Reliab., 2018

2013

Analysis in commutation of a new high voltage thyristor structure for high temperature.

Gaëtan Toulon, Abdelhakim Bourennane, Karine Isoird

Proceedings of the 20th International Conference Mixed Design of Integrated Circuits and Systems, 2013

2012

Analysis and optimization of lateral thin-film Silicon-on-insulator (SOI) MOSFET transistors.

Ignasi Cortés, Gaëtan Toulon, Frederic Morancho, E. Hugonnard-Bruyere, B. Villard, W. J. Toren

Microelectron. Reliab., 2012