Ignasi Cortés

According to our database, Ignasi Cortés authored at least 7 papers between 2005 and 2012.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2012

Analysis and optimization of lateral thin-film Silicon-on-insulator (SOI) MOSFET transistors.

Ignasi Cortés, Gaëtan Toulon, Frederic Morancho, E. Hugonnard-Bruyere, B. Villard, W. J. Toren

Microelectron. Reliab., 2012

Study of layout influence on ruggedness of NPT-IGBT devices by physical modelling.

Ignasi Cortés, Xavier Perpiñà, Jesús Urresti, Xavier Jordà, José Rebollo

Microelectron. Reliab., 2012

2011

Analysis of Clamped Inductive Turnoff Failure in Railway Traction IGBT Power Modules Under Overload Conditions.

Xavier Perpiñà, Jean-François Serviere, Jesús Urresti-Ibañez, Ignasi Cortés, Xavier Jordà, Salvador Hidalgo, José Rebollo, Michel Mermet-Guyennet

IEEE Trans. Ind. Electron., 2011

2008

Analysis of punch-through breakdown in bulk silicon RF power LDMOS transistors.

Ignasi Cortés, Pablo Fernández-Martínez, David Flores, Salvador Hidalgo, José Rebollo

Microelectron. Reliab., 2008

Superjunction LDMOS on thick-SOI technology for RF applications.

Ignasi Cortés, Pablo Fernández-Martínez, David Flores, Salvador Hidalgo, José Rebollo

Microelectron. J., 2008

2005

Lateral punch-through TVS devices for on-chip protection in low-voltage applications.

Jesús Urresti, Salvador Hidalgo, David Flores, Jaume Roig, Ignasi Cortés, José Rebollo

Microelectron. Reliab., 2005

Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile.

Ignasi Cortés, Jaume Roig, David Flores, Jesús Urresti, Salvador Hidalgo, José Rebollo

Microelectron. Reliab., 2005