David Trémouilles

According to our database, David Trémouilles authored at least 21 papers between 2001 and 2018.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2018

A new electro-optical transmission-line measurement-method revealing a possible contribution of source and drain contact resistances to GaN HEMT dynamic on-resistance.

D. Hachem, David Trémouilles, Frederic Morancho, Gaëtan Toulon

Microelectron. Reliab., 2018

2017

New triggering-speed-characterization method for diode-triggered SCR using TLP.

Mouna Mahane, David Trémouilles, Marise Bafleur, Benjamin Thon, Marianne Diatta, Lionel Jaouen

Microelectron. Reliab., 2017

Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation.

F. Boige, Frédéric Richardeau, David Trémouilles, Stéphane Lefebvre, G. Guibaud

Microelectron. Reliab., 2017

2015

Failure analysis of ESD-stressed SiC MESFET.

Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, Patrick Austin

Microelectron. Reliab., 2015

Optimization of a MOS-IGBT-SCR ESD protection component in smart power SOI technology.

Houssam Arbess, Marise Bafleur, David Trémouilles, Moustafa Zerarka

Microelectron. Reliab., 2015

2014

Analysis of an ESD failure mechanism on a SiC MESFET.

Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, Patrick Austin

Microelectron. Reliab., 2014

2013

Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation.

Nicolas Monnereau, Fabrice Caignet, David Trémouilles, Nicolas Nolhier, Marise Bafleur

Microelectron. Reliab., 2013

2012

An Accelerated Stress Test Method for Electrostatically Driven MEMS Devices.

Jinyu Jason Ruan, Nicolas Monnereau, David Trémouilles, Nicolas Mauran, Fabio Coccetti, Nicolas Nolhier, Robert Plana

IEEE Trans. Instrum. Meas., 2012

2009

Accelerated lifetime test of RF-MEMS switches under ESD stress.

Jinyu Jason Ruan, Nicolas Nolhier, George J. Papaioannou, David Trémouilles, Vincent Puyal, C. Villeneuve, T. Idda, Fabio Coccetti, Robert Plana

Microelectron. Reliab., 2009

A plug-and-play wideband RF circuit ESD protection methodology: T-diodes.

Dimitri Linten, Steven Thijs, Jonathan Borremans, Morin Dehan, David Trémouilles, Mirko Scholz, M. I. Natarajan, Piet Wambacq, Stefaan Decoutere, Guido Groeseneken

Microelectron. Reliab., 2009

Failure mechanisms of discrete protection device subjected to repetitive electrostatic discharges (ESD).

Marianne Diatta, Emilien Bouyssou, David Trémouilles, P. Martinez, F. Roqueta, O. Ory, Marise Bafleur

Microelectron. Reliab., 2009

2007

Transient voltage overshoot in TLP testing - Real or artifact?

David Trémouilles, Steven Thijs, Philippe Roussel, M. I. Natarajan, Vesselin K. Vassilev, Guido Groeseneken

Microelectron. Reliab., 2007

2005

Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure.

Nicolas Guitard, Fabien Essely, David Trémouilles, Marise Bafleur, Nicolas Nolhier, Philippe Perdu, André Touboul, Vincent Pouget, Dean Lewis

Microelectron. Reliab., 2005

RF ESD protection strategies - the design and performance trade-off challenges.

Philippe Jansen, Steven Thijs, Dimitri Linten, M. I. Natarajan, Vesselin K. Vassilev, Mingxu Liu, Ann Concannon, David Trémouilles, Takeshi Nakaie, Masanori Sawada, Vladislav A. Vashchenko, Marcel ter Beek, Takumi Hasebe, Stefaan Decoutere, Guido Groeseneken

Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005

2004

Low Frequency Noise Measurements for ESD Latent Defect Detection in High Reliability Applications.

Nicolas Guitard, David Trémouilles, Marise Bafleur, Laurent Escotte, Laurent Bary, Philippe Perdu, Gérard Sarrabayrouse, Nicolas Nolhier, Roberto Reyna-Rojas

Microelectron. Reliab., 2004

Latch-up ring design guidelines to improve electrostatic discharge (ESD) protection scheme efficiency.

David Trémouilles, Marise Bafleur, Géraldine Bertrand, Nicolas Nolhier, Nicolas Mauran, Lionel Lescouzères

IEEE J. Solid State Circuits, 2004

2003

TCAD and SPICE modeling help solve ESD protection issues in analog CMOS technology.

David Trémouilles, Géraldine Bertrand, Marise Bafleur, Felix Beaudoin, Philippe Perdu, Nicolas Guitard, Lionel Lescouzères

Microelectron. Reliab., 2003

Characterization of ESD induced defects using Photovoltaic Laser Stimulation (PLS).

Thomas Beauchêne, David Trémouilles, Dean Lewis, Philippe Perdu, Pascal Fouillat

Microelectron. Reliab., 2003

Thermal laser stimulation and NB-OBIC techniques applied to ESD defect localization.

Thomas Beauchêne, Dean Lewis, Felix Beaudoin, Vincent Pouget, Romain Desplats, Pascal Fouillat, Philippe Perdu, Marise Bafleur, David Trémouilles

Microelectron. Reliab., 2003

2001

Backside Localization of Current Leakage Faults Using Thermal Laser Stimulation.

Romain Desplats, Felix Beaudoin, Philippe Perdu, Patrick Poirier, David Trémouilles, Marise Bafleur, Dean Lewis

Microelectron. Reliab., 2001

Analysis and compact modeling of a vertical grounded-base n-p-n bipolar transistor used as ESD protection in a smart power technology.

Géraldine Bertrand, Christelle Delage, Marise Bafleur, Nicolas Nolhier, Jean-Marie Dorkel, Quang Nguyen, Nicolas Mauran, David Trémouilles, Philippe Perdu

IEEE J. Solid State Circuits, 2001