Éric Frayssinet

According to our database, Éric Frayssinet authored at least 2 papers between 2020 and 2022.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2022

Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes.

P. Vigneshwara Raja, Christophe Raynaud, Camille Sonneville, Atse Julien Eric N'Dohi, Hervé Morel, Luong-Viêt Phung, Thi Huong Ngo, Philippe De Mierry, Éric Frayssinet, Hassan Maher, Josiane Tasselli, Karine Isoird, Frédéric Morancho, Yvon Cordier, Dominique Planson

Microelectron. J., 2022

2020

Recessed and P-GaN Regrowth Gate Development for Normally-off AlGaN/GaN HEMTs.

Chaymaa Haloui, Gaëtan Toulon, Josiane Tasselli, Yvon Cordier, Éric Frayssinet, Karine Isoird, Frédéric Morancho, Mathieu Gavelle

Proceedings of the 27th International Conference on Mixed Design of Integrated Circuits and System, 2020