Frederic Morancho

According to our database, Frederic Morancho authored at least 9 papers between 2007 and 2022.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2022

Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes.

P. Vigneshwara Raja, Christophe Raynaud, Camille Sonneville, Atse Julien Eric N'Dohi, Hervé Morel, Luong-Viêt Phung, Thi Huong Ngo, Philippe De Mierry, Éric Frayssinet, Hassan Maher, Josiane Tasselli, Karine Isoird, Frédéric Morancho, Yvon Cordier, Dominique Planson

Microelectron. J., 2022

Design Optimization of a New Nanostructured P-GaN Gate for Normally-off GaN HEMTs.

Daniel Rouly, Josiane Tasselli, Patrick Austin, Chaymaa Haloui, Karine Isoird, Frédéric Morancho

Proceedings of the 29th International Conference on Mixed Design of Integrated Circuits and System, 2022

2020

Recessed and P-GaN Regrowth Gate Development for Normally-off AlGaN/GaN HEMTs.

Chaymaa Haloui, Gaëtan Toulon, Josiane Tasselli, Yvon Cordier, Éric Frayssinet, Karine Isoird, Frédéric Morancho, Mathieu Gavelle

Proceedings of the 27th International Conference on Mixed Design of Integrated Circuits and System, 2020

2018

A new electro-optical transmission-line measurement-method revealing a possible contribution of source and drain contact resistances to GaN HEMT dynamic on-resistance.

D. Hachem, David Trémouilles, Frederic Morancho, Gaëtan Toulon

Microelectron. Reliab., 2018

2017

A solution for channel electron migration in normally-off MIS-HEMT with buried fluorine ions.

Saleem Hamady, Bilal Beydoun, Frederic Morancho

Proceedings of the 29th International Conference on Microelectronics, 2017

2015

An improved junction termination design using deep trenches for superjunction power devices.

Sylvain Noblecourt, Frederic Morancho, Karine Isoird, Patrick Austin, Josiane Tasselli

Proceedings of the 22nd International Conference Mixed Design of Integrated Circuits & Systems, 2015

2012

Analysis and optimization of lateral thin-film Silicon-on-insulator (SOI) MOSFET transistors.

Ignasi Cortés, Gaëtan Toulon, Frederic Morancho, E. Hugonnard-Bruyere, B. Villard, W. J. Toren

Microelectron. Reliab., 2012

2008

Switching performance of 65 V vertical N-channel FLYMOSFETs.

L. Théolier, Karine Isoird, H. Tranduc, Frederic Morancho, Jaume Roig, Yann Weber, Evgueniy N. Stefanov, Jean-Michel Reynes

Microelectron. J., 2008

2007

Characterisation of P floating islands for 150-200 V FLYMOSFETs.

Yann Weber, Jaume Roig, Jean-Michel Reynes, Frederic Morancho, Evgueniy N. Stefanov, Monique Dilhan, Gérard Sarrabayrouse

IET Circuits Devices Syst., 2007