Karine Isoird

According to our database, Karine Isoird authored at least 8 papers between 2008 and 2022.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2022

Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes.

P. Vigneshwara Raja, Christophe Raynaud, Camille Sonneville, Atse Julien Eric N'Dohi, Hervé Morel, Luong-Viêt Phung, Thi Huong Ngo, Philippe De Mierry, Éric Frayssinet, Hassan Maher, Josiane Tasselli, Karine Isoird, Frédéric Morancho, Yvon Cordier, Dominique Planson

Microelectron. J., 2022

Design Optimization of a New Nanostructured P-GaN Gate for Normally-off GaN HEMTs.

Daniel Rouly, Josiane Tasselli, Patrick Austin, Chaymaa Haloui, Karine Isoird, Frédéric Morancho

Proceedings of the 29th International Conference on Mixed Design of Integrated Circuits and System, 2022

2020

Recessed and P-GaN Regrowth Gate Development for Normally-off AlGaN/GaN HEMTs.

Chaymaa Haloui, Gaëtan Toulon, Josiane Tasselli, Yvon Cordier, Éric Frayssinet, Karine Isoird, Frédéric Morancho, Mathieu Gavelle

Proceedings of the 27th International Conference on Mixed Design of Integrated Circuits and System, 2020

2015

Failure analysis of ESD-stressed SiC MESFET.

Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, Patrick Austin

Microelectron. Reliab., 2015

An improved junction termination design using deep trenches for superjunction power devices.

Sylvain Noblecourt, Frederic Morancho, Karine Isoird, Patrick Austin, Josiane Tasselli

Proceedings of the 22nd International Conference Mixed Design of Integrated Circuits & Systems, 2015

2014

Analysis of an ESD failure mechanism on a SiC MESFET.

Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, Patrick Austin

Microelectron. Reliab., 2014

2013

Analysis in commutation of a new high voltage thyristor structure for high temperature.

Gaëtan Toulon, Abdelhakim Bourennane, Karine Isoird

Proceedings of the 20th International Conference Mixed Design of Integrated Circuits and Systems, 2013

2008

Switching performance of 65 V vertical N-channel FLYMOSFETs.

L. Théolier, Karine Isoird, H. Tranduc, Frederic Morancho, Jaume Roig, Yann Weber, Evgueniy N. Stefanov, Jean-Michel Reynes

Microelectron. J., 2008