Hidenori Ohyama

According to our database, Hidenori Ohyama authored at least 7 papers between 2001 and 2006.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2006

Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs.

Joan Marc Rafí, Eddy Simoen, Kiyoteru Hayama, Abdelkarim Mercha, Francesca Campabadal, Hidenori Ohyama, Cor Claeys

Microelectron. Reliab., 2006

Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation.

Kiyoteru Hayama, Kenichiro Takakura, K. Shigaki, Hidenori Ohyama, Joan Marc Rafí, Abdelkarim Mercha, Eddy Simoen, Cor Claeys

Microelectron. Reliab., 2006

2005

Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs.

Kiyoteru Hayama, Kenichiro Takakura, Hidenori Ohyama, S. Kuboyama, S. Matsuda, Joan Marc Rafí, Abdelkarim Mercha, Eddy Simoen, Cor Claeys

Microelectron. Reliab., 2005

2004

Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation.

Kiyoteru Hayama, Kenichiro Takakura, Hidenori Ohyama, Abdelkarim Mercha, Eddy Simoen, Cor Claeys, Joan Marc Rafí, Michael Kokkoris

Microelectron. Reliab., 2004

2001

Degradation and recovery of AlGaAs/GaAs p-HEMT irradiated by high-energy particle.

Hidenori Ohyama, Eddy Simoen, S. Kuroda, Cor Claeys, Y. Takami, T. Hakata, K. Kobayashi, M. Nakabayashi, Hiromi Sunaga

Microelectron. Reliab., 2001

Radiation damages of polycrystalline silicon films and npn Si transistors by high-energy particle irradiation.

Hidenori Ohyama, M. Nakabayashi, Eddy Simoen, Cor Claeys, T. Tanaka, T. Hirao, S. Onada, K. Kobayashi

Microelectron. Reliab., 2001

Reliability of polycrystalline silicon thin film resistors.

M. Nakabayashi, Hidenori Ohyama, Eddy Simoen, M. Ikegami, Cor Claeys, K. Kobayashi, M. Yoneoka, K. Miyahara

Microelectron. Reliab., 2001