Eddy Simoen
According to our database1,
Eddy Simoen
authored at least 28 papers
between 2001 and 2021.
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Bibliography
2021
Analysis of zero-temperature coefficient behavior on vertically stacked double nanosheet nMOS devices.
Microelectron. J., 2021
A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2021
A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies.
Proceedings of the IEEE International Reliability Physics Symposium, 2021
Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel p-FinFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2021
2019
Analytical modelling and device design optimisation of epitaxial layer-based III-V tunnel FET.
IET Circuits Devices Syst., 2019
Impact of Device Architecture and Gate Stack Processing on the Low-Frequency Noise of Silicon Nanowire Transistors.
Proceedings of the 13th IEEE International Conference on ASIC, 2019
2014
Microelectron. Reliab., 2014
2013
Drain currents and their excess noise in triple gate bulk p-channel FinFETs of different geometry.
Microelectron. Reliab., 2013
Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors.
Proceedings of the European Solid-State Device Research Conference, 2013
2012
High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs.
Microelectron. Reliab., 2012
An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices.
Microelectron. Reliab., 2012
Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs.
Microelectron. Reliab., 2012
On the correlation between the retention time of FBRAM and the low-frequency noise of UTBOX SOI nMOSFETs.
Proceedings of the 2012 European Solid-State Device Research Conference, 2012
Low-frequency noise assessment of the transport mechanisms in SiGe channel bulk FinFETs.
Proceedings of the 2012 European Solid-State Device Research Conference, 2012
2010
SPICE modelling of hot-carrier degradation in Si<sub>1-</sub><sub>x</sub>Ge<sub>x</sub> S/D and HfSiON based pMOS transistors.
Microelectron. Reliab., 2010
2007
Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks.
Microelectron. Reliab., 2007
Microelectron. Reliab., 2007
2006
Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs.
Microelectron. Reliab., 2006
Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation.
Microelectron. Reliab., 2006
The temperature mobility degradation influence on the zero temperature coefficient of partially and fully depleted SOI MOSFETs.
Microelectron. J., 2006
Microelectron. J., 2006
2005
Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs.
Microelectron. Reliab., 2005
2004
Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation.
Microelectron. Reliab., 2004
2001
Microelectron. Reliab., 2001
Microelectron. Reliab., 2001
Radiation damages of polycrystalline silicon films and npn Si transistors by high-energy particle irradiation.
Microelectron. Reliab., 2001
Microelectron. Reliab., 2001