Cor Claeys

According to our database1, Cor Claeys authored at least 21 papers between 2001 and 2019.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Awards

IEEE Fellow

IEEE Fellow 2009, "For contributions to semiconductor device physics, defect engineering, and low frequency noise characterization".

Timeline

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Links

On csauthors.net:

Bibliography

2019
Impact of Device Architecture and Gate Stack Processing on the Low-Frequency Noise of Silicon Nanowire Transistors.
Proceedings of the 13th IEEE International Conference on ASIC, 2019

2016
Editor's note.
Sci. China Inf. Sci., 2016

2014
Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation.
Microelectron. Reliab., 2014

2013
Drain currents and their excess noise in triple gate bulk p-channel FinFETs of different geometry.
Microelectron. Reliab., 2013

2012
High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs.
Microelectron. Reliab., 2012

An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices.
Microelectron. Reliab., 2012

On the correlation between the retention time of FBRAM and the low-frequency noise of UTBOX SOI nMOSFETs.
Proceedings of the 2012 European Solid-State Device Research Conference, 2012

Low-frequency noise assessment of the transport mechanisms in SiGe channel bulk FinFETs.
Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2007
Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks.
Microelectron. Reliab., 2007

High-temperature performance of state-of-the-art triple-gate transistors.
Microelectron. Reliab., 2007

Study of the linear kink effect in PD SOI nMOSFETs.
Microelectron. J., 2007

2006
Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs.
Microelectron. Reliab., 2006

Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation.
Microelectron. Reliab., 2006

The temperature mobility degradation influence on the zero temperature coefficient of partially and fully depleted SOI MOSFETs.
Microelectron. J., 2006

Impact of the twin-gate structure on the linear kink effect in PD SOI nMOSFETS.
Microelectron. J., 2006

2005
Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs.
Microelectron. Reliab., 2005

2004
Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation.
Microelectron. Reliab., 2004

Technological Challenges of Advanced CMOS Processing and Their Impact on Design Aspects.
Proceedings of the 17th International Conference on VLSI Design (VLSI Design 2004), 2004

2001
Degradation and recovery of AlGaAs/GaAs p-HEMT irradiated by high-energy particle.
Microelectron. Reliab., 2001

Radiation damages of polycrystalline silicon films and npn Si transistors by high-energy particle irradiation.
Microelectron. Reliab., 2001

Reliability of polycrystalline silicon thin film resistors.
Microelectron. Reliab., 2001


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