Hyeokjin Kim

According to our database¹, Hyeokjin Kim authored at least 3 papers between 2013 and 2017.

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2017

Fast and accurate method of lifetime estimation for HfSiON/SiO<sub>2</sub> dielectric n-MOSFETs under positive bias temperature instability.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2017

2014

Voltage dependent degradation of HfSiON/SiO<sub>2</sub> nMOSFETs under positive bias temperature instability.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2014

2013

Effect of negative bias temperature instability induced by a low stress voltage on nanoscale high-k/metal gate pMOSFETs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2013