Gang-Jun Kim

According to our database¹, Gang-Jun Kim authored at least 10 papers between 2012 and 2024.

Collaborative distances:

Dijkstra number² of five.
Erdős number³ of four.

Timeline

Legend:

Book

In proceedings

Article

PhD thesis

Dataset

Other

Links

On csauthors.net:

Bibliography

2024

Current-Voltage Modeling of DRAM Cell Transistor Using Genetic Algorithm and Deep Learning.

[BibT_eX]

[DOI]

IEEE Access, 2024

2021

Effect of High Temperature on Recovery of Hot Carrier Degradation of scaled nMOSFETs in DRAM.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2021

The Characterization of Degradation on various SiON pMOSFET transistors under AC/DC NBTI stress.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2018

Method to extract parameters of power law for nano-scale SiON pMOSFETs under negative bias temperature instability.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2018

Effect of DC/AC stress on the reliability of cell capacitor in DRAM.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2018

Effect of OFF-state stress on reliability of nMOSFET in SWD circuits of DRAM.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2018

2016

Channel width dependence of AC stress on bulk nMOSFETs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2016

Degradation of pMOSFETs due to hot electron induced punchthrough.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2016

2013

Effect of negative bias temperature instability induced by a low stress voltage on nanoscale high-k/metal gate pMOSFETs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2013

2012

Effect of electron-electron scattering at an elevated temperature on device lifetime of nanoscale nMOSFETs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2012

Gang-Jun Kim

Timeline

Legend:

Links

On csauthors.net:

Bibliography

Loading...