Jean-Claude de Jaeger

According to our database, Jean-Claude de Jaeger authored at least 6 papers between 2001 and 2018.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2018

Temperature monitoring of short-gate length AlGaN/GaN HEMT via an integrated sensor.

Flavien Cozette, Marie Lesecq, Nicolas Defrance, Michel Rousseau, Jean-Claude de Jaeger, Adrien Cutivet, Hassan Maher

Proceedings of the 48th European Solid-State Device Research Conference, 2018

2016

Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress.

H. Lakhdhar, Nathalie Labat, Arnaud Curutchet, Nicolas Defrance, Marie Lesecq, Jean-Claude de Jaeger, Nathalie Malbert

Microelectron. Reliab., 2016

2013

Electron delay analysis and image charge effect in AlGaN/GaN HEMT on silicon substrate.

Alain Agboton, Nicolas Defrance, Phillipe Altuntas, Vannessa Avramovic, Adrien Cutivet, Rezky Ouhachi, Jean-Claude de Jaeger, Samira Bouzid-Driad, Hassan Maher, Michel Renvoise, Peter Frijlink

Proceedings of the European Solid-State Device Research Conference, 2013

2009

Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs.

Nathalie Malbert, Nathalie Labat, Arnaud Curutchet, C. Sury, V. Hoel, J.-C. de Jaeger, Nicolas Defrance, Y. Douvry, Christian Dua, Mourad Oualli, C. Bru-Chevallier, Jean-Marie Bluet, W. Chikhaoui

Microelectron. Reliab., 2009

2007

Physical study of the dissipated power area in high electron mobility transistors for thermal modelling.

Brahim Benbakhti, Michel Rousseau, J.-C. de Jaeger

Microelectron. J., 2007

2001

2D-Hydrodynamic Energy Model Including Avalanche Breakdown Phenomenon for Power Field Effect Transistors.

Michel Rousseau, J.-C. de Jaeger

VLSI Design, 2001