Brahim Benbakhti

According to our database, Brahim Benbakhti authored at least 5 papers between 2007 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

Impact of Various Si and III-V nano-MOSFET Architectures on Performance Characteristics.

A. Islam, Brahim Benbakhti, Walid Abushiba, Karol Kalna

Proceedings of the 2025 5th International Conference on Electrical, 2025

2018

Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs.

Steven J. Duffy, Brahim Benbakhti, Karol Kalna, Mohammed Boucherta, Wei Dong Zhang, Nour-Eddine Bourzgui, Ali Soltani

IEEE Access, 2018

2017

Role of Self-Heating and Polarization in AlGaN/GaN-Based Heterostructures.

Khaled Ahmeda, Brendan Ubochi, Brahim Benbakhti, Steven J. Duffy, Ali Soltani, Wei Dong Zhang, Karol Kalna

IEEE Access, 2017

2010

Impact of interface state trap density on the performance characteristics of different III-V MOSFET architectures.

Brahim Benbakhti, J. S. Ayubi-Moak, Karol Kalna, D. Lin, Geert Hellings, Guy Brammertz, Kristin De Meyer, Iain Thayne, Asen Asenov

Microelectron. Reliab., 2010

2007

Physical study of the dissipated power area in high electron mobility transistors for thermal modelling.

Brahim Benbakhti, Michel Rousseau, J.-C. de Jaeger

Microelectron. J., 2007