Hassan Maher

According to our database, Hassan Maher authored at least 7 papers between 2013 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

Design, Simulation and Optimization of an Enhanced Vertical GaN Nanowire Transistor on Silicon Substrate for Power Electronic Applications.

Mohammed Benjelloun, Zahraa Zaidan, Ali Soltani, Noëlle Gogneau, Denis Morris, Jean-Christophe Harmand, Hassan Maher

IEEE Access, 2023

2022

Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes.

P. Vigneshwara Raja, Christophe Raynaud, Camille Sonneville, Atse Julien Eric N'Dohi, Hervé Morel, Luong-Viêt Phung, Thi Huong Ngo, Philippe De Mierry, Éric Frayssinet, Hassan Maher, Josiane Tasselli, Karine Isoird, Frédéric Morancho, Yvon Cordier, Dominique Planson

Microelectron. J., 2022

2019

Sensors based on AlGaN/GaN HEMT for fast H2 and O2 detection and measurement at high temperature.

Hassane Ouazzani Chahdi, Abdallah Ougazzaden, Jean-Paul Salvestrini, Hassan Maher, Ali Soltani, Omar Helli, Nour-Eddine Bourzgui, Léo Breuil, David Danovitch, Paul L. Voss, Suresh Sundaram, Vincent Aubry, Yacine Halfaya

Proceedings of the 2019 IEEE SENSORS, Montreal, QC, Canada, October 27-30, 2019, 2019

Scalable Small-Signal Modeling of AlGaN/GaN HEMT Based on Distributed Gate Resistance.

Bilal Hassan, Adrien Cutivet, Christophe Rodriguez, Flavien Cozette, Ali Soltani, Hassan Maher, François Boone

Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

2018

Active Gate Driver and Management of the Current Switching Speed in GaN Transistors During Tum-On.

M. L. Beye, Jean-François Mogniotte, Luong-Viêt Phung, Hassan Maher, Bruno Allard

Proceedings of the IECON 2018, 2018

Temperature monitoring of short-gate length AlGaN/GaN HEMT via an integrated sensor.

Flavien Cozette, Marie Lesecq, Nicolas Defrance, Michel Rousseau, Jean-Claude de Jaeger, Adrien Cutivet, Hassan Maher

Proceedings of the 48th European Solid-State Device Research Conference, 2018

2013

Electron delay analysis and image charge effect in AlGaN/GaN HEMT on silicon substrate.

Alain Agboton, Nicolas Defrance, Phillipe Altuntas, Vannessa Avramovic, Adrien Cutivet, Rezky Ouhachi, Jean-Claude de Jaeger, Samira Bouzid-Driad, Hassan Maher, Michel Renvoise, Peter Frijlink

Proceedings of the European Solid-State Device Research Conference, 2013