Jian-Hsing Lee

A Concise Electrothermal Model to Characterize the Thermal Safe-Operating Area of Power Transistor.

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Proceedings of the IEEE International Reliability Physics Symposium, 2023

Transmission Line Pulse Width Impacting on Device Performances.

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Proceedings of the International Conference on Consumer Electronics - Taiwan, 2023

Optimizing Device Metal Routing Layouts by the Simulation Tool.

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Proceedings of the International Conference on Consumer Electronics - Taiwan, 2023

Bipolar Transistors' Holding Phenomena.

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Proceedings of the International Conference on Consumer Electronics - Taiwan, 2023

Incorporation of a Simple ESD Circuit in a 650V E-Mode GaN HEMT for All-Terminal ESD Protection.

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Proceedings of the IEEE International Reliability Physics Symposium, 2022

EOS Endurance Power Circuits without Depletion Mode Devices.

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Proceedings of the IEEE International Conference on Consumer Electronics - Taiwan, 2022

Gate Voltages Impacting on Latch-up Measurements.

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Proceedings of the IEEE International Conference on Consumer Electronics - Taiwan, 2022

Study on the Guard Rings for Latchup Prevention between HV-PMOS and LV-PMOS in a 0.15-µm BCD Process.

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Proceedings of the IEEE International Reliability Physics Symposium, 2021

Optimizing Power IC Layouts by Simulation Tools.

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Proceedings of the IEEE International Conference on Consumer Electronics-Taiwan, 2021

Signal Control Switching Applied on Large Array Devices' Layouts.

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Proceedings of the IEEE International Conference on Consumer Electronics-Taiwan, 2021

Signal Control Switching for Improving Large Array Devices' ESD Performances.

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Proceedings of the IEEE International Conference on Consumer Electronics - Taiwan, 2020

The Correlations between ESD and TLP in Large Array Devices.

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Proceedings of the IEEE International Conference on Consumer Electronics - Taiwan, 2020

Physical Model for ESD Human Body Model to Transmission Line Pulse.

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[DOI]

Jian-Hsing Lee

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Natarajan Mahadeva Iyer

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Timothy J. Maloney

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Tunable Holding-Voltage High Voltage ESD Devices.

[BibT_eX]

[DOI]

Jian-Hsing Lee

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Natarajan Mahadeva Iyer

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Analyzing Gate-Driven Circuit Parameters for Adding ESD Performances.

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Proceedings of the IEEE International Conference on Consumer Electronics - Taiwan, 2019

Printed-circuit board (PCB) charge induced product yield-loss during the final test.

[BibT_eX]

[DOI]

Jian-Hsing Lee

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Kunihiko Takahashi

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Manjunatha Prabhu

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Mahadeva Iyer Natarajan

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Methodology to achieve planar technology-like ESD performance in FINFET process.

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Mahadeva Iyer Natarajan

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Shesh Mani Pandey

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Enhanced CDM-robustness for the packaged IC with the extra bonding wire to the die-attach plate.

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Proceedings of the IEEE International Reliability Physics Symposium, 2015

Robust ESD self-protected LDNMOSFET by an enhanced displacement-current triggering.

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Proceedings of the IEEE International Reliability Physics Symposium, 2015

A new pre-driver design for improving the ESD performance of the high voltage tolerant I/O.

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Proceedings of the International Symposium on Circuits and Systems (ISCAS 2005), 2005

The embedded SCR NMOS and low capacitance ESD protection device.

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Proceedings of the IEEE 2002 Custom Integrated Circuits Conference, 2002

Jian-Hsing Lee

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