Katsuyuki Fukutani

According to our database, Katsuyuki Fukutani authored at least 2 papers between 2012 and 2017.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2017

Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface.

Yusuke Higashi, Riichiro Takaishi, Koichi Kato, Masamichi Suzuki, Yasushi Nakasaki, Mitsuhiro Tomita, Yuichiro Mitani, Masuaki Matsumoto, Shohei Ogura, Katsuyuki Fukutani, Kikuo Yamabe

Microelectron. Reliab., 2017

2012

Reliability driven guideline for BEOL Optimization: Protecting MOS stacks from hydrogen-related impurity penetration.

Ziyuan Liu, Fumihiko Hayashi, Shinji Fujieda, Markus Wilde, Katsuyuki Fukutani

Proceedings of the IEEE International Conference on IC Design & Technology, 2012