Leo C. N. de Vreede

Orcid: 0000-0002-5834-5461

According to our database1, Leo C. N. de Vreede authored at least 40 papers between 1994 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Links

On csauthors.net:

Bibliography

2024
OpenDPD: An Open-Source End-to-End Learning & Benchmarking Framework for Wideband Power Amplifier Modeling and Digital Pre-Distortion.
CoRR, 2024

32.7 A 25.2dBm PSAT, 35-to-43GHz VSWR-Resilient Chain-Weaver Eight-Way Balanced PA with an Embedded Impedance/Power Sensor.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024

2023
A Wideband Digital-Intensive Current-Mode Transmitter Line-Up.
IEEE J. Solid State Circuits, September, 2023

A Wideband Energy-Efficient Multi-Mode CMOS Digital Transmitter.
IEEE J. Solid State Circuits, March, 2023

A Highly Linear Receiver Using Parallel Preselect Filter for 5G Microcell Base Station Applications.
IEEE J. Solid State Circuits, 2023

A 300MHz-BW, 27-to-38dBm In-Band OIP3 sub-7GHz Receiver for 5G Local Area Base Station Applications.
Proceedings of the IEEE International Solid- State Circuits Conference, 2023

2022
A Wideband IQ-Mapping Direct-Digital RF Modulator for 5G Transmitters.
IEEE J. Solid State Circuits, 2022

A Millimeter-Wave CMOS Series-Doherty Power Amplifier With Post-Silicon Inter-Stage Passive Validation.
IEEE J. Solid State Circuits, 2022

A Four-Way Series Doherty Digital Polar Transmitter at mm-Wave Frequencies.
IEEE J. Solid State Circuits, 2022

Compact N-Way Doherty Power Combiners for mm-wave 5G Transmitters.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2022

A 0.5-3GHz Receiver with a Parallel Preselect Filter Achieving 120dB/dec Channel Selectivity and +28dBm Out-of-Band IIP3.
Proceedings of the IEEE Custom Integrated Circuits Conference, 2022

A 1-to-4GHz Multi-Mode Digital Transmitter in 40nm CMOS Supporting 200MHz 1024-QAM OFDM signals with more than 23dBm/66% Peak Power/Drain Efficiency.
Proceedings of the IEEE Custom Integrated Circuits Conference, 2022

2021
A Millimeter-Wave Mutual-Coupling-Resilient Double-Quadrature Transmitter for 5G Applications.
IEEE J. Solid State Circuits, 2021

A Wideband Four-Way Doherty Bits-In RF-Out CMOS Transmitter.
IEEE J. Solid State Circuits, 2021

A 24-to-30GHz Double-Quadrature Direct-Upconversion Transmitter with Mutual-Coupling-Resilient Series-Doherty Balanced PA for 5G MIMO Arrays.
Proceedings of the IEEE International Solid-State Circuits Conference, 2021

6.5 A 3dB-NF 160MHz-RF-BW Blocker-Tolerant Receiver with Third-Order Filtering for 5G NR Applications.
Proceedings of the IEEE International Solid-State Circuits Conference, 2021

6.2 A 4-Way Doherty Digital Transmitter Featuring 50%-LO Signed IQ Interleave Upconversion with more than 27dBm Peak Power and 40% Drain Efficiency at 10dB Power Back-Off Operating in the 5GHz Band.
Proceedings of the IEEE International Solid-State Circuits Conference, 2021

A Versatile and Efficient 0.1-to-11 Gb/s CML Transmitter in 40-nm CMOS.
Proceedings of the 18th International SoC Design Conference, 2021

On-Chip Output Stage Design for a Continuous Class-F Power Amplifier.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2021

A 30GHz 4-way Series Doherty Digital Polar Transmitter Achieving 18% Drain Efficiency and -27.6dB EVM while Transmitting 300MHz 64-QAM OFDM Signal.
Proceedings of the IEEE Custom Integrated Circuits Conference, 2021

A 24-to-32GHz series-Doherty PA with two-step impedance inverting power combiner achieving 20.4dBm Psat and 38%/34% PAE at Psat/6dB PBO for 5G applications.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2021

2020
A 0.5-3 GHz I/Q Interleaved Direct-Digital RF Modulator with up to 320 MHz Modulation Bandwidth in 40 nm CMOS.
Proceedings of the 2020 IEEE Custom Integrated Circuits Conference, 2020

2018
A Wideband Linear I/Q-Interleaving DDRM.
IEEE J. Solid State Circuits, 2018

2017
An Intrinsically Linear Wideband Polar Digital Power Amplifier.
IEEE J. Solid State Circuits, 2017

17.5 An intrinsically linear wideband digital polar PA featuring AM-AM and AM-PM corrections through nonlinear sizing, overdrive-voltage control, and multiphase RF clocking.
Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017

2016
Out-of-Band Immunity to Interference of Single-Ended Baseband Amplifiers Through IM<sub>2</sub> Cancellation.
IEEE Trans. Circuits Syst. I Regul. Pap., 2016

2015
Outphasing transmitters, enabling digital-like amplifier operation with high efficiency and spectral purity.
IEEE Commun. Mag., 2015

2014
Analysis of pure- and mixed-mode class-B outphasing amplifiers.
Proceedings of the IEEE 5th Latin American Symposium on Circuits and Systems, 2014

2011
A 65nm CMOS pulse-width-controlled driver with 8Vpp output voltage for switch-mode RF PAs up to 3.6GHz.
Proceedings of the IEEE International Solid-State Circuits Conference, 2011

A 2-GHz digital I/Q modulator in 65-nm CMOS.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2011

2009
Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and AlN Cooling.
IEEE J. Solid State Circuits, 2009

A 19GHz, 250pJ/bit non-linear BPSK demodulator in 90nm CMOS.
Proceedings of the 35th European Solid-State Circuits Conference, 2009

2006
Adaptive Multi-Band Multi-Mode Power Amplifier Using Integrated Varactor-Based Tunable Matching Networks.
IEEE J. Solid State Circuits, 2006

2004
On the design of unilateral dual-loop feedback low-noise amplifiers with simultaneous noise, impedance, and IIP3 match.
IEEE J. Solid State Circuits, 2004

2003
Power amplifier PAE and ruggedness optimization by second-harmonic control.
IEEE J. Solid State Circuits, 2003

2002
A novel frequency-independent third-order intermodulation distortion cancellation technique for BJT amplifiers.
IEEE J. Solid State Circuits, 2002

2001
Reduction of UHF power transistor distortion with a nonuniform collector doping profile.
IEEE J. Solid State Circuits, 2001

1999
Bipolar transistor epilayer design using the MAIDS mixed-level simulator.
IEEE J. Solid State Circuits, 1999

1996
Advanced modeling of distortion effects in bipolar transistors using the Mextram model.
IEEE J. Solid State Circuits, 1996

1994
A figure of merit for the high-frequency noise behavior of bipolar transistors.
IEEE J. Solid State Circuits, October, 1994


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