Lihua Dai

According to our database, Lihua Dai authored at least 10 papers between 2016 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

Anti-periodic solutions of Clifford-valued fuzzy cellular neural networks with delays.

Jin Gao, Lihua Dai

Comput. Appl. Math., December, 2022

Anti-Periodic Synchronization of Clifford-Valued Neutral-Type Recurrent Neural Networks With D Operator.

Jin Gao, Lihua Dai

IEEE Access, 2022

2021

S-Asymptotically ω-Periodic Solutions of Fractional-Order Complex-Valued Recurrent Neural Networks With Delays.

Yuanyuan Hou, Lihua Dai

IEEE Access, 2021

Intelligent Grasping Method of Multi-joint Manipulator Based on Deep Learning.

Lihua Dai, Qingqing Shi

Proceedings of the 4th International Conference on Information Systems and Computer Aided Education, 2021

2020

Electrical performance of 130 nm PD-SOI MOSFET with diamond layout.

Xiaonian Liu, Lihua Dai, Pingliang Li, Shichang Zou

Microelectron. J., 2020

2018

A novel highly reliable and low-power radiation hardened SRAM bit-cell design.

Dianpeng Lin, Yiran Xu, Xiaonian Liu, Wenyi Zhu, Lihua Dai, Mengying Zhang, Xiaoyun Li, Xin Xie, Jianwei Jiang, Huilong Zhu, Zhengxuan Zhang, Shichang Zou

IEICE Electron. Express, 2018

Total dose radiation induced changes of the floating body effects in the partially depleted SOI NMOS with ultrathin gate oxide.

Zhiyuan Hu, Lihua Dai, Zhengxuan Zhang, Xiaoyun Li, Shichang Zou

IEICE Electron. Express, 2018

2017

Influences of silicon-rich shallow trench isolation on total ionizing dose hardening and gate oxide integrity in a 130 nm partially depleted SOI CMOS technology.

Lei Song, Zhiyuan Hu, Mengying Zhang, Xiaonian Liu, Lihua Dai, Zhengxuan Zhang, Shichang Zou

Microelectron. Reliab., 2017

Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETs.

Lihua Dai, Xiaonian Liu, Mengying Zhang, Leqing Zhang, Zhiyuan Hu, Dawei Bi, Zhengxuan Zhang, Shichang Zou

Microelectron. Reliab., 2017

2016

Bias dependence of TID induced single transistor latch for 0.13 μm partially depleted SOI input/output NMOSFETs.

Shuang Fan, Bingxu Ning, Zhiyuan Hu, Zhengxuan Zhang, Dawei Bi, Chao Peng, Lei Song, Lihua Dai

Microelectron. Reliab., 2016