Lihua Dai

Orcid: 0000-0002-0700-1108

According to our database1, Lihua Dai authored at least 15 papers between 2016 and 2026.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

Legend:

Book  In proceedings  Article  PhD thesis  Dataset  Other 

Links

On csauthors.net:

Bibliography

2026
A 7-bit 76-81-GHz Hybrid Vector-Modulated Variable Gain Phase Shifter Combining Phase-Invariant VGA and 1-bit CDAC.
IEEE Trans. Circuits Syst. II Express Briefs, January, 2026

Double Hopf bifurcation generated by dual memory delays in a diffusive two-species model.
J. Appl. Math. Comput., 2026

2025
Dynamical analysis of almost periodic solutions for delayed octonion-valued BAM neural networks.
Comput. Appl. Math., March, 2025

2024
The application of deep learning technology in integrated circuit design.
Energy Inform., December, 2024

Finite-time stability of weighted pseudo almost periodic solutions for Clifford-valued shunting inhibitory cellular neural networks with delays.
Int. J. Control, 2024

2022
Anti-periodic solutions of Clifford-valued fuzzy cellular neural networks with delays.
Comput. Appl. Math., December, 2022

Anti-Periodic Synchronization of Clifford-Valued Neutral-Type Recurrent Neural Networks With D Operator.
IEEE Access, 2022

2021
S-Asymptotically ω-Periodic Solutions of Fractional-Order Complex-Valued Recurrent Neural Networks With Delays.
IEEE Access, 2021

Intelligent Grasping Method of Multi-joint Manipulator Based on Deep Learning.
Proceedings of the 4th International Conference on Information Systems and Computer Aided Education, 2021

2020
Electrical performance of 130 nm PD-SOI MOSFET with diamond layout.
Microelectron. J., 2020

2018
A novel highly reliable and low-power radiation hardened SRAM bit-cell design.
IEICE Electron. Express, 2018

Total dose radiation induced changes of the floating body effects in the partially depleted SOI NMOS with ultrathin gate oxide.
IEICE Electron. Express, 2018

2017
Influences of silicon-rich shallow trench isolation on total ionizing dose hardening and gate oxide integrity in a 130 nm partially depleted SOI CMOS technology.
Microelectron. Reliab., 2017

Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETs.
Microelectron. Reliab., 2017

2016
Bias dependence of TID induced single transistor latch for 0.13 μm partially depleted SOI input/output NMOSFETs.
Microelectron. Reliab., 2016


  Loading...