Matt Goldman

According to our database, Matt Goldman authored at least 3 papers between 2003 and 2010.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2010

A 3bit/cell 32Gb NAND flash memory at 34nm with 6MB/s program throughput and with dynamic 2b/cell blocks configuration mode for a program throughput increase up to 13MB/s.

G. G. Marotta, Agostino Macerola, Andrea D'Alessandro, A. Torsi, C. Cerafogli, C. Lattaro, C. Musilli, D. Rivers, Emanuele Sirizotti, F. Paolini, G. Imondi, G. Naso, Giovanni Santin, L. Botticchio, Luca De Santis, Luigi Pilolli, M. L. Gallese, Michele Incarnati, Marco Tiburzi, P. Conenna, S. Perugini, Violante Moschiano, W. Di Francesco, Matt Goldman, Chris Haid, Domenico Di Cicco, D. Orlandi, F. Rori, Massimo Rossini, Tommaso Vali, Ramin Ghodsi, Frank Roohparvar

Proceedings of the IEEE International Solid-State Circuits Conference, 2010

2009

A 172mm² 32Gb MLC NAND flash memory in 34nm CMOS.

Raymond Zeng, Navneet Chalagalla, Dan Chu, Daniel Elmhurst, Matt Goldman, Chris Haid, Atif Huq, Takaaki Ichikawa, Joel Jorgensen, Owen Jungroth, Nishnat Kajla, Ravinder Kajley, Koichi Kawai, Jiro Kishimoto, Ali Madraswala, Tetsuji Manabe, Vikram Mehta, Midori Morooka, Katie Nguyen, Yoko Oikawa, Bharat Pathak, Rod Rozman, Tom Ryan, Andy Sendrowski, William Sheung, Martin Szwarc, Yasuhiro Takashima, Satoru Tamada, Toru Tanzawa, Tomoharu Tanaka, Mase Taub, Darshak Udeshi, Sjigekazu Yamada, Hiroyuki Yokoyama

Proceedings of the IEEE International Solid-State Circuits Conference, 2009

2003

A 1.8-V 128-Mb 125-MHz multilevel cell flash memory with flexible read while write.

Daniel Elmhurst, Matthew Goldman

IEEE J. Solid State Circuits, 2003