Matthew Charles

According to our database, Matthew Charles authored at least 3 papers between 2017 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2025

Numerical and Thermal Analysis of Reverse Leakage Current of Pseudo-Vertical GaN p-n Diodes Grown with Selective Area Growth.

Mohammed El Amrani, Thomas Kaltsounis, David Plaza Arguello, Stéphane Moreau, Hala El Rammouz, Matthew Charles, Julien Buckley, Daniel Alquier

Proceedings of the IEEE International Reliability Physics Symposium, 2025

2021

Parasitic Capacitance Analysis in Short Channel GaN MIS-HEMTs.

Roméo Kom Kammeugne, Charles Leroux, Tadeu Mota Frutuoso, Jacques Cluzel, Laura Vauche, Cyrille Le Royer, Romain Gwoziecki, Xavier Garros, Fred Gaillard, Matthew Charles, Edwige Bano, Gérard Ghibaudo

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

2017

On the understanding of cathode related trapping effects in GaN-on-Si Schottky diodes.

William Vandendaele, Thomas Lorin, Romain Gwoziecki, Yannick Baines, Jérome Biscarrat, Marie-Anne Jaud, Charlotte Gillot, Matthew Charles, Marc Plissonnier, Gilles Reimbold

Proceedings of the 47th European Solid-State Device Research Conference, 2017