Maurizio Millesimo

According to our database, Maurizio Millesimo authored at least 5 papers between 2022 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

HTGB and DGS Reliability Assessment of e-mode GaN-HEMTs with Ferroelectric Gate Stack.

Andrea Natale Tallarico, Maurizio Millesimo, U. Ibrar, Enrico Sangiorgi, Claudio Fiegna, T.-Y. Yang, J.-S. Wu, H. Iwai, E.-Y. Chang

Proceedings of the IEEE International Reliability Physics Symposium, 2025

RTN Analysis of Schottky p-GaN Gate HEMTs Under Forward Gate Stress: Impact of Temperature.

Maurizio Millesimo, Lorenzo Valentini, Claudio Fiegna, Enrico Sangiorgi, Andrea Natale Tallarico, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot

Proceedings of the IEEE International Reliability Physics Symposium, 2025

Uncertainty-Aware Gate-Lifetime Prediction of p-GaN Gate HEMTs Using Gaussian Processes.

Shuoyan Zhao, Raj Thilak Rajan, Andrea Natale Tallarico, Maurizio Millesimo, Vladislav Volosov, Antonio Imbruglia, Justin Dauwels

Proceedings of the 2025 9th International Conference on System Reliability and Safety (ICSRS), 2025

2024

Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate.

Maurizio Millesimo, Claudio Fiegna, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Andrea Natale Tallarico

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2022

Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition.

Maurizio Millesimo, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Claudio Fiegna, Andrea Natale Tallarico

Proceedings of the IEEE International Reliability Physics Symposium, 2022