Andrea Natale Tallarico

According to our database, Andrea Natale Tallarico authored at least 14 papers between 2017 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

HTGB and DGS Reliability Assessment of e-mode GaN-HEMTs with Ferroelectric Gate Stack.

Andrea Natale Tallarico, Maurizio Millesimo, U. Ibrar, Enrico Sangiorgi, Claudio Fiegna, T.-Y. Yang, J.-S. Wu, H. Iwai, E.-Y. Chang

Proceedings of the IEEE International Reliability Physics Symposium, 2025

RTN Analysis of Schottky p-GaN Gate HEMTs Under Forward Gate Stress: Impact of Temperature.

Maurizio Millesimo, Lorenzo Valentini, Claudio Fiegna, Enrico Sangiorgi, Andrea Natale Tallarico, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot

Proceedings of the IEEE International Reliability Physics Symposium, 2025

Uncertainty-Aware Gate-Lifetime Prediction of p-GaN Gate HEMTs Using Gaussian Processes.

Shuoyan Zhao, Raj Thilak Rajan, Andrea Natale Tallarico, Maurizio Millesimo, Vladislav Volosov, Antonio Imbruglia, Justin Dauwels

Proceedings of the 2025 9th International Conference on System Reliability and Safety (ICSRS), 2025

2024

Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate.

Maurizio Millesimo, Claudio Fiegna, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Andrea Natale Tallarico

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2022

Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition.

Maurizio Millesimo, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Claudio Fiegna, Andrea Natale Tallarico

Proceedings of the IEEE International Reliability Physics Symposium, 2022

A novel approach to analyze the reliability of GaN power HEMTs operating in a DC-DC Buck converter.

Giuseppe Capasso, Mauro Zanuccoli, Andrea Natale Tallarico, Claudio Fiegna

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

2020

Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors.

Andrea Natale Tallarico, Susanna Reggiani, Riccardo Depetro, Giuseppe Croce, Enrico Sangiorgi, Claudio Fiegna

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability.

Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot, Andrea Natale Tallarico, Enrico Sangiorgi, Claudio Fiegna, J. Zheng, X. Ma, Matteo Borga, Elena Fabris, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, Juraj Priesol, Alexander Satka

Proceedings of the IEEE International Reliability Physics Symposium, 2019

An Integrated DC/DC Converter with Online Monitoring of Hot-Carrier Degradation.

Matteo Pizzotti, Marco Crescentini, Andrea Natale Tallarico, Aldo Romani

Proceedings of the 26th IEEE International Conference on Electronics, Circuits and Systems, 2019

TCAD predictions of hot-electron injection in p-type LDMOS transistors.

Federico Giuliano, Riccardo Depetro, Giuseppe Croce, Andrea Natale Tallarico, Susanna Reggiani, Antonio Gnudi, Enrico Sangiorgi, Claudio Fiegna, Mattia Rossetti, Antonio Molfese, Stefano Manzini

Proceedings of the 49th European Solid-State Device Research Conference, 2019

Characterization and Modeling of BTI in SiC MOSFETs.

Davide Cornigli, Andrea Natale Tallarico, Susanna Reggiani, Claudio Fiegna, Enrico Sangiorgi, Luis Sanchez, Carlos Valdivieso, Giuseppe Consentino, Felice Crupi

Proceedings of the 49th European Solid-State Device Research Conference, 2019

2018

TCAD investigation on hot-electron injection in new-generation technologies.

Susanna Reggiani, Mattia Rossetti, Antonio Gnudi, Andrea Natale Tallarico, Antonio Molfese, Stefano Manzini, Riccardo Depetro, Giuseppe Croce, Enrico Sangiorgi, Claudio Fiegna

Microelectron. Reliab., 2018

2017

Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide.

Andrea Natale Tallarico, Susanna Reggiani, Paolo Magnone, Giuseppe Croce, Riccardo Depetro, P. Gattari, Enrico Sangiorgi, Claudio Fiegna

Microelectron. Reliab., 2017

Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level.

Isabella Rossetto, Matteo Meneghini, Eleonora Canato, Marco Barbato, Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Andrea Natale Tallarico, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2017