Stefaan Decoutere

According to our database, Stefaan Decoutere authored at least 48 papers between 2001 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps.

Davide Favero, A. Cavaliere, Carlo De Santi, Matteo Borga, W. Gonçalez Filho, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Analysis and Design of a Fully-Integrated Pulsed LiDAR Driver in 100V-GaN IC Technology.

Andrea Bettini, Thibault Cosnier, Alessandro Magnani, Olga Syshchyk, Matteo Borga, Stefaan Decoutere, Andrea Neviani

Proceedings of the 17th Conference on Ph.D Research in Microelectronics and Electronics, 2022

Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition.

M. Millesimo, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Claudio Fiegna, Andrea Natale Tallarico

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs.

Davide Favero, Carlo De Santi, Kalparupa Mukherjee, Karen Geens, Matteo Borga, Benoit Bakeroot, Shuzhen You, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power Circuits.

Olga Syshchyk, Thibault Cosnier, Zheng-Hong Huang, Deepthi Cingu, Dirk Wellekens, Anurag Vohra, Karen Geens, Pavan Vudumula, Urmimala Chatterjee, Stefaan Decoutere, Tian-Li Wu, Benoit Bakeroot

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

2021

An E-mode p-GaN HEMT monolithically-integrated three-level gate driver operating with a single voltage supply.

Junichiro Nagao, Urmimala Chatterjee, Xiangdong Li, Jun Furuta, Stefaan Decoutere, Kazutoshi Kobayashi

IEICE Electron. Express, 2021

Vertical stack reliability of GaN-on-Si buffers for low-voltage applications.

Elena Fabris, Matteo Borga, Niels Posthuma, Ming Zhao, Brice De Jaeger, Shuzhen You, Stefaan Decoutere, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni

Proceedings of the IEEE International Reliability Physics Symposium, 2021

ON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric.

Eliana Acurio, Lionel Trojman, Brice De Jaeger, Benoit Bakeroot, Stefaan Decoutere

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors.

Kalparupa Mukherjee, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, Shuzhen You, Karen Geens, Matteo Borga, Benoit Bakeroot, Stefaan Decoutere

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process.

Yuki Yamashita, Steve Stoffels, Niels Posthuma, Karen Geens, Xiangdong Li, Jun Furuta, Stefaan Decoutere, Kazutoshi Kobayashi

IEICE Electron. Express, 2019

Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability.

Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot, Andrea Natale Tallarico, Enrico Sangiorgi, Claudio Fiegna, J. Zheng, X. Ma, Matteo Borga, Elena Fabris, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, Juraj Priesol, Alexander Satka

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Monolithically integrated GaN power ICs designed using the MIT virtual source GaNFET (MVSG) compact model for enhancement-mode p-GaN gate power HEMTs, logic transistors and resistors.

Shuzhen You, Xiangdong Li, Stefaan Decoutere, Guido Groeseneken, Zhanfei Chen, Jun Liu, Yuki Yamashita, Kazutoshi Kobayashi

Proceedings of the 49th European Solid-State Device Research Conference, 2019

2018

Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs.

Matteo Borga, Matteo Meneghini, Steve Stoffels, Marleen Van Hove, M. Zhao, X. Li, Stefaan Decoutere, Enrico Zanoni, Gaudenzio Meneghesso

Microelectron. Reliab., 2018

2017

Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level.

Isabella Rossetto, Matteo Meneghini, Eleonora Canato, Marco Barbato, Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Andrea Natale Tallarico, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2017

Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation.

Ales Chvála, Juraj Marek, Patrik Pribytny, Alexander Satka, Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Daniel Donoval

Microelectron. Reliab., 2017

2016

Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis.

Isabella Rossetto, Matteo Meneghini, Vanessa Rizzato, Maria Ruzzarin, Andrea Favaron, Steve Stoffels, Marleen Van Hove, Niels Posthuma, Tian-Li Wu, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2016

Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate.

Gaudenzio Meneghesso, Matteo Meneghini, Davide Bisi, Isabella Rossetto, Tian-Li Wu, Marleen Van Hove, Denis Marcon, Steve Stoffels, Stefaan Decoutere, Enrico Zanoni

Microelectron. Reliab., 2016

2015

Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs.

Isabella Rossetto, Matteo Meneghini, Davide Bisi, Alessandro Barbato, Marleen Van Hove, Denis Marcon, Tian-Li Wu, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2015

Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs.

Tian-Li Wu, Denis Marcon, Brice De Jaeger, Marleen Van Hove, Benoit Bakeroot, Steve Stoffels, Guido Groeseneken, Stefaan Decoutere, Robin Roelofs

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014

Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress.

Tian-Li Wu, Denis Marcon, Steve Stoffels, Shuzhen You, Brice De Jaeger, Marleen Van Hove, Guido Groeseneken, Stefaan Decoutere

Microelectron. Reliab., 2014

Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes.

Jie Hu, Steve Stoffels, Silvia Lenci, Nicolo Ronchi, Rafael Venegas, Shuzhen You, Benoit Bakeroot, Guido Groeseneken, Stefaan Decoutere

Microelectron. Reliab., 2014

Breakdown investigation in GaN-based MIS-HEMT devices.

Fabio Alessio Marino, Davide Bisi, Matteo Meneghini, Giovanni Verzellesi, Enrico Zanoni, Marleen Van Hove, Shuzhen You, Stefaan Decoutere, Denis Marcon, Steve Stoffels, Nicolo Ronchi, Gaudenzio Meneghesso

Proceedings of the 44th European Solid State Device Research Conference, 2014

2012

Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop.

Denis Marcon, John Viaene, Paola Favia, Hugo Bender, Xuanwu Kang, Silvia Lenci, Steve Stoffels, Stefaan Decoutere

Microelectron. Reliab., 2012

High temperature behaviour of GaN-on-Si high power MISHEMT devices.

Dirk Wellekens, Rafael Venegas, Xuanwu Kang, Mohammed Zahid, Tian-Li Wu, Denis Marcon, Puneet Srivastava, Marleen Van Hove, Stefaan Decoutere

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2011

GaN-based HEMTs tested under high temperature storage test.

Denis Marcon, Xuanwu Kang, John Viaene, Marleen Van Hove, Puneet Srivastava, Stefaan Decoutere, Robert Mertens, Gustaaf Borghs

Microelectron. Reliab., 2011

2010

Identifying the Bottlenecks to the RF Performance of FinFETs.

Vaidyanathan Subramanian, Abdelkarim Mercha, Bertrand Parvais, Morin Dehan, Guido Groeseneken, Willy M. C. Sansen, Stefaan Decoutere

Proceedings of the VLSI Design 2010: 23rd International Conference on VLSI Design, 2010

45-nm Planar bulk-CMOS 23-GHz LNAs with high-Q above-IC inductors.

Wen-Chieh Wang, Zue-Der Huang, Geert Carchon, Abdelkarim Mercha, Stefaan Decoutere, Walter De Raedt, Chung-Yu Wu

Proceedings of the International Symposium on Circuits and Systems (ISCAS 2010), May 30, 2010

2009

A plug-and-play wideband RF circuit ESD protection methodology: T-diodes.

Dimitri Linten, Steven Thijs, Jonathan Borremans, Morin Dehan, David Trémouilles, Mirko Scholz, M. I. Natarajan, Piet Wambacq, Stefaan Decoutere, Guido Groeseneken

Microelectron. Reliab., 2009

FinFET RF receiver building blocks operating above 10 GHz.

Domagoj Siprak, Piet Wambacq, Bertrand Parvais, Abdelkarim Mercha, Michael Fulde, Jesenka Veledar Kruger, Morin Dehan, Stefaan Decoutere

Proceedings of the 35th European Solid-State Circuits Conference, 2009

Pushing the speed limits of SiGe: C HBTs up to 0.5 Terahertz.

Stefaan Decoutere, Stefaan Van Huylenbroeck, Bernd Heinemann, Alexander Fox, Pascal Chevalier, Alain Chantre, Thomas F. Meister, Klaus Aufinger, Michael Schröter

Proceedings of the IEEE Custom Integrated Circuits Conference, 2009

2008

Advanced Planar Bulk and Multigate CMOS Technology: Analog-Circuit Benchmarking up to mm-Wave Frequencies.

Piet Wambacq, Abdelkarim Mercha, Karen Scheir, Bob Verbruggen, Jonathan Borremans, Vincent De Heyn, Steven Thijs, Dimitri Linten, Geert Van der Plas, Bertrand Parvais, Morin Dehan, Stefaan Decoutere, Charlotte Soens, Nadine Collaert, Malgorzata Jurczak

Proceedings of the 2008 IEEE International Solid-State Circuits Conference, 2008

A 400 μW 4.7-to-6.4GHz VCO under an Above-IC Inductor in 45nm CMOS.

Jonathan Borremans, Piet Wambacq, Maarten Kuijk, Geert Carchon, Stefaan Decoutere

Proceedings of the 2008 IEEE International Solid-State Circuits Conference, 2008

2007

The Potential of FinFETs for Analog and RF Circuit Applications.

Piet Wambacq, Bob Verbruggen, Karen Scheir, Jonathan Borremans, Morin Dehan, Dimitri Linten, Vincent De Heyn, Geert Van der Plas, Abdelkarim Mercha, Bertrand Parvais, Cedric Gustin, Vaidyanathan Subramanian, Nadine Collaert, Malgorzata Jurczak, Stefaan Decoutere

IEEE Trans. Circuits Syst. I Regul. Pap., 2007

FinFET technology for analog and RF circuits.

Bertrand Parvais, Vaidyanathan Subramanian, Abdelkarim Mercha, Morin Dehan, Piet Wambacq, Willy Sansen, Guido Groeseneken, Stefaan Decoutere

Proceedings of the 14th IEEE International Conference on Electronics, 2007

An Accurate Scalable Compact Model for the Substrate Resistance of RF MOSFETs.

Bertrand Parvais, S. Hu, Morin Dehan, Abdelkarim Mercha, Stefaan Decoutere

Proceedings of the IEEE 2007 Custom Integrated Circuits Conference, 2007

2006

Implementation of plug-and-play ESD protection in 5.5GHz 90nm RF CMOS LNAs - Concepts, constraints and solutions.

Steven Thijs, M. Natarajan Iyer, Dimitri Linten, Wutthinan Jeamsaksiri, T. Daenen, Robin Degraeve, Andries J. Scholten, Stefaan Decoutere, Guido Groeseneken

Microelectron. Reliab., 2006

A 0.16pJ/Conversion-Step 2.5mW 1.25GS/s 4b ADC in a 90nm Digital CMOS Process.

Geert Van der Plas, Stefaan Decoutere, Stéphane Donnay

Proceedings of the 2006 IEEE International Solid State Circuits Conference, 2006

Technologies for (sub-) 45nm Analog/RF CMOS - Circuit Design Opportunities and Challenges.

Stefaan Decoutere, Piet Wambacq, Vaidy Subramanian, Jonathan Borremans, Abdelkarim Mercha

Proceedings of the IEEE 2006 Custom Integrated Circuits Conference, 2006

2005

A 5-GHz fully integrated ESD-protected low-noise amplifier in 90-nm RF CMOS.

Dimitri Linten, Steven Thijs, Mahadeva Iyer Natarajan, Piet Wambacq, Wutthinan Jeamsaksiri, Javier Ramos, Abdelkarim Mercha, Snezana Jenei, Stéphane Donnay, Stefaan Decoutere

IEEE J. Solid State Circuits, 2005

Low-power voltage-controlled oscillators in 90-nm CMOS using high-quality thin-film postprocessed inductors.

Dimitri Linten, Xiao Sun, Geert Carchon, Wutthinan Jeamsaksiri, Abdelkarim Mercha, Javier Ramos, Snezana Jenei, Piet Wambacq, Morin Dehan, Lars Aspemyr, Andries J. Scholten, Stefaan Decoutere, Stéphane Donnay, Walter De Raedt

IEEE J. Solid State Circuits, 2005

<i>RFCV</i> Test Structure Design for a Selected Frequency Range.

Wutthinan Jeamsaksiri, Abdelkarim Mercha, Javier Ramos, Stefaan Decoutere, Florence Cubaynes

IEICE Trans. Electron., 2005

24 GHz LNA in 90nm RF-CMOS with high-Q above-IC inductors.

Olivier Dupuis, Xiao Sun, Geert Carchon, Philippe Soussan, Mattias Ferndahl, Stefaan Decoutere, Walter De Raedt

Proceedings of the 31st European Solid-State Circuits Conference, 2005

Low-power low-noise highly ESD robust LNA, and VCO design using above-IC inductors.

Dimitri Linten, Xiao Sun, Steven Thijs, M. I. Natarajan, Abdelkarim Mercha, Geert Carchon, Piet Wambacq, Takeshi Nakaie, Stefaan Decoutere

Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005

RF ESD protection strategies - the design and performance trade-off challenges.

Philippe Jansen, Steven Thijs, Dimitri Linten, M. I. Natarajan, Vesselin K. Vassilev, Mingxu Liu, Ann Concannon, David Trémouilles, Takeshi Nakaie, Masanori Sawada, Vladislav A. Vashchenko, Marcel ter Beek, Takumi Hasebe, Stefaan Decoutere, Guido Groeseneken

Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005

2004

A 328 μW 5 GHz voltage-controlled oscillator in 90 nm CMOS with high-quality thin-film post-processed inductor.

Dimitri Linten, Xiao Sun, Geert Carchon, Wutthinan Jeamsaksiri, Abdelkarim Mercha, Javier Ramos, Snezana Jenei, Lars Aspemyr, Andries J. Scholten, Piet Wambacq, Stefaan Decoutere, Stéphane Donnay, Walter De Raedt

Proceedings of the IEEE 2004 Custom Integrated Circuits Conference, 2004

2002

Physics-based closed-form inductance expression for compact modeling of integrated spiral inductors.

Snezana Jenei, Bart K. J. C. Nauwelaers, Stefaan Decoutere

IEEE J. Solid State Circuits, 2002

An easy-to-use mismatch model for the MOS transistor.

Jeroen A. Croon, Maarten Rosmeulen, Stefaan Decoutere, Willy Sansen, Herman E. Maes

IEEE J. Solid State Circuits, 2002

2001

Impact of gate oxide nitridation process on 1/f noise in 0.18 mum CMOS.

M. Da Rold, Eddy Simoen, Sofie Mertens, Marc Schaekers, G. Badenes, Stefaan Decoutere

Microelectron. Reliab., 2001