Enrico Sangiorgi

According to our database, Enrico Sangiorgi authored at least 18 papers between 1985 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition.

M. Millesimo, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Claudio Fiegna, Andrea Natale Tallarico

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2020

Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors.

Andrea Natale Tallarico, Susanna Reggiani, Riccardo Depetro, Giuseppe Croce, Enrico Sangiorgi, Claudio Fiegna

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability.

Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot, Andrea Natale Tallarico, Enrico Sangiorgi, Claudio Fiegna, J. Zheng, X. Ma, Matteo Borga, Elena Fabris, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, Juraj Priesol, Alexander Satka

Proceedings of the IEEE International Reliability Physics Symposium, 2019

TCAD predictions of hot-electron injection in p-type LDMOS transistors.

Federico Giuliano, Riccardo Depetro, Giuseppe Croce, Andrea Natale Tallarico, Susanna Reggiani, Antonio Gnudi, Enrico Sangiorgi, Claudio Fiegna, Mattia Rossetti, Antonio Molfese, Stefano Manzini

Proceedings of the 49th European Solid-State Device Research Conference, 2019

Characterization and Modeling of BTI in SiC MOSFETs.

Davide Cornigli, Andrea Natale Tallarico, Susanna Reggiani, Claudio Fiegna, Enrico Sangiorgi, Luis Sanchez, Carlos Valdivieso, Giuseppe Consentino, Felice Crupi

Proceedings of the 49th European Solid-State Device Research Conference, 2019

2018

TCAD investigation on hot-electron injection in new-generation technologies.

Susanna Reggiani, Mattia Rossetti, Antonio Gnudi, Andrea Natale Tallarico, Antonio Molfese, Stefano Manzini, Riccardo Depetro, Giuseppe Croce, Enrico Sangiorgi, Claudio Fiegna

Microelectron. Reliab., 2018

2017

Optimum Design Rules for CMOS Hall Sensors.

Marco Crescentini, Michele Biondi, Aldo Romani, Marco Tartagni, Enrico Sangiorgi

Sensors, 2017

Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide.

Andrea Natale Tallarico, Susanna Reggiani, Paolo Magnone, Giuseppe Croce, Riccardo Depetro, P. Gattari, Enrico Sangiorgi, Claudio Fiegna

Microelectron. Reliab., 2017

Doing a Lot with a Little: Micropower Conversion and Management for Ambient-Powered Electronics.

Aldo Romani, Marco Tartagni, Enrico Sangiorgi

Computer, 2017

2013

Implementation of nanoscale double-gate CMOS circuits using compact advanced transport models.

Muthupandian Cheralathan, Esteban Contreras, Joaquín Alvarado, Antonio Cerdeira, Giuseppe Iannaccone, Enrico Sangiorgi, Benjamín Iñíguez

Microelectron. J., 2013

2012

A methodology to account for the finger interruptions in solar cell performance.

Raffaele De Rose, Antonio Malomo, Paolo Magnone, Felice Crupi, Giorgio Cellere, Marco Martire, Diego Tonini, Enrico Sangiorgi

Microelectron. Reliab., 2012

2007

The Monte Carlo approach to transport modeling in deca-nanometer MOSFETs.

Enrico Sangiorgi, Pierpaolo Palestri, David Esseni, Claudio Fiegna, Luca Selmi

Proceedings of the 33rd European Solid-State Circuits Conference, 2007

1993

A numerical method to compute isotropic band models from anisotropic semiconductor band structures.

Antonio Abramo, Franco Venturi, Enrico Sangiorgi, Jack M. Higman, Bruno Riccò

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1993

1991

Monte Carlo simulations of high energy electrons and holes in Si-n-MOSFET's.

Franco Venturi, Enrico Sangiorgi, Rossella Brunetti, Wolfgang Quade, Carlo Jacoboni, Bruno Riccò

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1991

1990

Latch-up in CMOS circuits: A review.

Enrico Sangiorgi

Eur. Trans. Telecommun., 1990

1989

A general purpose device simulator coupling Poisson and Monte Carlo transport with applications to deep submicron MOSFETs.

Franco Venturi, R. Kent Smith, Enrico Sangiorgi, Mark R. Pinto, Bruno Riccò

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1989

1988

MOS²: an efficient MOnte Carlo Simulator for MOS devices.

Enrico Sangiorgi, Bruno Riccò, Franco Venturi

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1988

1985

Two-Dimensional Numerical Analysis of Latchup in a VLSI CMOS Technology.

Enrico Sangiorgi, Mark R. Pinto, Stanley E. Swirhun, Robert W. Dutton

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1985