Meishoku Masahara

According to our database, Meishoku Masahara authored at least 15 papers between 2007 and 2015.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2015

Power-efficient gray-scale control of silicon thermo-optic phase shifters by pulse width modulation using monolithically integrated MOSFET.

Guangwei Cong, Takashi Matsukawa, Keijiro Suzuki, Ken Tanizawa, Sang-Hun Kim, Tadashi Chiba, Hirofumi Tadokoro, Masashi Yanagihara, Morifumi Ohno, Haruhiko Kuwatsuka, Yasushi Igarashi, Meishoku Masahara, Hiroshi Ishikawa, Kazuhiro Ikeda, Shu Namiki, Hitoshi Kawashima

Proceedings of the Optical Fiber Communications Conference and Exhibition, 2015

PBTI for N-type tunnel FinFETs.

Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yongxun Liu, Takashi Matsukawa, Yuki Ishikawa, Kazuhiko Endo, Shin-ichi O'Uchi, Junichi Tsukada, Hiromi Yamauchi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Meishoku Masahara

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

2014

SOI CMOS Voltage Multiplier Circuits with Body Bias Control Technique for Battery-Less Wireless Sensor System.

Yasushi Igarashi, Tadashi Chiba, Shin-ichi O'Uchi, Meishoku Masahara, Kunihiro Sakamoto

IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 2014

Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance.

Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo, Shin-ichi O'Uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota

Proceedings of the 44th European Solid State Device Research Conference, 2014

Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configuration.

Shinji Migita, Takashi Matsukawa, Takahiro Mori, Koichi Fukuda, Yukinori Morita, Wataru Mizubayashi, Kazuhiko Endo, Yongxun Liu, Shin-ichi O'Uchi, Meishoku Masahara, Hiroyuki Ota

Proceedings of the 44th European Solid State Device Research Conference, 2014

2013

Independent-Double-Gate FinFET SRAM Technology.

Kazuhiko Endo, Shin-ichi O'Uchi, Takashi Matsukawa, Yongxun Liu, Meishoku Masahara

IEICE Trans. Electron., 2013

Performance limit of parallel electric field tunnel FET and improvement by modified gate and channel configurations.

Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Akihito Tanabe, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo, Shin-ichi O'Uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota

Proceedings of the European Solid-State Device Research Conference, 2013

Guidelines for symmetric threshold voltage in tunnel FinFETs with single and dual metal gate electrodes.

Wataru Mizubayashi, Koichi Fukuda, Takahiro Mori, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Shin-ichi O'Uchi, Yuki Ishikawa, Shinji Migita, Yukinori Morita, Akihito Tanabe, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara, Hiroyuki Ota

Proceedings of the European Solid-State Device Research Conference, 2013

2012

High-Frequency Precise Characterization of Intrinsic FinFET Channel.

Hideo Sakai, Shin-ichi O'Uchi, Takashi Matsukawa, Kazuhiko Endo, Yongxun Liu, Junichi Tsukada, Yuki Ishikawa, Tadashi Nakagawa, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara, Hiroki Ishikuro

IEICE Trans. Electron., 2012

A 0.7-V Opamp in Scaled Low-Standby-Power FinFET Technology.

Shin-ichi O'Uchi, Kazuhiko Endo, Takashi Matsukawa, Yongxun Liu, Tadashi Nakagawa, Yuki Ishikawa, Junichi Tsukada, Hiromi Yamauchi, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara

IEICE Trans. Electron., 2012

Two-step annealing effects on ultrathin EOT higher-k (k = 40) ALD-HfO2 gate stacks.

Yukinori Morita, Shinji Migita, Wataru Mizubayashi, Meishoku Masahara, Hiroyuki Ota

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2010

0.5V FinFET SRAM with dynamic threshold control of pass gates for salvaging malfunctioned bits.

Shin-ichi O'Uchi, Kazuhiko Endo, Yongxun Liu, Tadashi Nakagawa, Takashi Matsukawa, Yuki Ishikawa, Junichi Tsukada, Hiromi Yamauchi, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara

Proceedings of the 36th European Solid-State Circuits Conference, 2010

Realization of 0.7-V analog circuits by adaptive-Vt operation of FinFET.

Shin-ichi O'Uchi, Kazuhiko Endo, Yongxun Liu, Tadashi Nakagawa, Takashi Matsukawa, Yuki Ishikawa, Junichi Tsukada, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara

Proceedings of the IEEE Custom Integrated Circuits Conference, 2010

2008

FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current Reduction.

Shin-ichi O'Uchi, Meishoku Masahara, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Kunihiro Sakamoto, Toshihiro Sekigawa, Hanpei Koike, Eiichi Suzuki

IEICE Trans. Electron., 2008

2007

Flex-Pass-Gate SRAM Design for Static Noise Margin Enhancement Using FinFET-Based Technology.

Shin-ichi O'Uchi, Meishoku Masahara, Kunihiro Sakamoto, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Toshihiro Sekigawa, Hanpei Koike, Eiichi Suzuki

Proceedings of the IEEE 2007 Custom Integrated Circuits Conference, 2007