Mounira Berkani

According to our database, Mounira Berkani authored at least 7 papers between 2009 and 2017.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of five.

2017

Mechanisms of power module source metal degradation during electro-thermal aging.

R. Ruffilli, Mounira Berkani, Philippe Dupuy, Stéphane Lefebvre, Y. Weber, Marc Legros

Microelectron. Reliab., 2017

2015

In-depth investigation of metallization aging in power MOSFETs.

R. Ruffilli, Mounira Berkani, Philippe Dupuy, Stéphane Lefebvre, Y. Weber, Marc Legros

Microelectron. Reliab., 2015

2014

3-D electrothermal simulation of active cycling on smart power MOSFETs during short-circuit and UIS conditions.

Michele Riccio, Vincenzo d'Alessandro, Andrea Irace, Gilles Rostaing, Mounira Berkani, Stéphane Lefebvre, Philippe Dupuy

Microelectron. Reliab., 2014

2013

Reliability of power MOSFET-based smart switches under normal and extreme conditions for 24 V battery system applications.

Gilles Rostaing, Mounira Berkani, D. Mechouche, Denis Labrousse, Stéphane Lefebvre, Zoubir Khatir, Philippe Dupuy

Microelectron. Reliab., 2013

Robustness of 1.2 kV SiC MOSFET devices.

D. Othman, Stéphane Lefebvre, Mounira Berkani, Zoubir Khatir, Ali Ibrahim, A. Bouzourene

Microelectron. Reliab., 2013

2011

Ageing and Failure Modes of IGBT Modules in High-Temperature Power Cycling.

Vanessa Smet, François Forest, Jean-Jacques Huselstein, Frédéric Richardeau, Zoubir Khatir, Stéphane Lefebvre, Mounira Berkani

IEEE Trans. Ind. Electron., 2011

2009

Estimation of SiC JFET temperature during short-circuit operations.

Mounira Berkani, Stéphane Lefebvre, Narjes Boughrara, Zoubir Khatir, Jean-Claude Faugières, Peter Friedrichs, Ali Haddouche

Microelectron. Reliab., 2009