Justin Brockman

According to our database, Justin Brockman authored at least 3 papers between 2016 and 2019.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of five.

2019

A 7Mb STT-MRAM in 22FFL FinFET Technology with 4ns Read Sensing Time at 0.9V Using Write-Verify-Write Scheme and Offset-Cancellation Sensing Technique.

Liqiong Wei, Juan G. Alzate, Umut Arslan, Justin Brockman, Nilanjan Das, Kevin Fischer, Tahir Ghani, Oleg Golonzka, Patrick Hentges, Rawshan Jahan, Pulkit Jain, Blake C. Lin, Mesut Meterelliyoz, Jim O'Donnell, Conor Puls, Pedro A. Quintero, Tanaya Sahu, Meenakshi Sekhar, Ajay Vangapaty, Chris Wiegand, Fatih Hamzaoglu

Proceedings of the IEEE International Solid- State Circuits Conference, 2019

eNVM MRAM Retention Reliability Modeling in 22FFL FinFET Technology.

James A. O'Donnell, Chris Connor, Tanmoy Pramanik, Jeff Hicks, Juan G. Alzate, Fatih Hamzaoglu, Justin Brockman, Oleg Golonzka, Kevin Fischer

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2016

Band diagram for low-k/Cu interconnects: The starting point for understanding back-end-of-line (BEOL) electrical reliability.

Michael J. Mutch, Thomas Pomorski, Brad C. Bittel, Corey J. Cochrane, Patrick M. Lenahan, Xin Liu, Robert J. Nemanich, Justin Brockman, Marc French, Markus Kuhn, Benjamin French, Sean W. King

Microelectron. Reliab., 2016