Quang Huy Le

According to our database, Quang Huy Le authored at least 7 papers between 2019 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

A 5.6 dB NF Two-Stage 110 - 125 GHz LNA Gain-Boosted by RC-over-Neutralization for Radar Applications in 28 nm CMOS.

Victor Lasserre, Sarah Koop-Brinkmann, Michele Caruso, Daniele Dal Maistro, Giovanni Volpato, Quang Huy Le, Thomas Kämpfe, Christian Ziegler, Finn Stapelfeldt, Vadim Issakov

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2024

2023

Reconfigurable ferroelectric hafnium oxide FeFET fabricated in 28 nm CMOS technology for mmWave applications.

Sukhrob Abdulazhanov, Quang Huy Le, Dang Khoa Huynh, Maximilian Lederer, Yannick Raffel, Kai Ni, Xunzhao Yin, Thomas Kämpfe, Gerald Gerlach

Proceedings of the 53rd IEEE European Solid-State Device Research Conference, 2023

Permittivity Characterization of Ferroelectric Thin-Film Hafnium Zirconium Oxide Varactors up to 170 GHz.

Sukhrob Abdulazhanov, Quang Huy Le, Dang Khoa Huynh, David Lehninger, Thomas Kämpfe, Gerald Gerlach

Proceedings of the Device Research Conference, 2023

2022

BEoL integrated hafnium zirconium oxide varactors for tunable mmWave applications.

Sukhrob Abdulazhanov, Dang Khoa Huynh, Quang Huy Le, David Lehninger, Thomas Kämpfe, Gerald Gerlach

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

2021

22FDSOI device towards RF and mmWave applications.

Zhixing Zhao, Steffen Lehmann, Wei Lun Oo, Amit Kumar Sahoo, Shafi Syed, Quang Huy Le, Dang Khoa Huynh, Talha Chohan, Dirk Utess, Dominik Kleimaier, Maciej Wiatr, Sabine Kolodinski, Jerome Mazurier, Jan Hoentschel, Andreas Knorr, Ned Cahoon, Stefan Kneitz

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021

2019

DC-110 GHz Characterization of 22FDX^® FDSOI Transistors for 5G Transmitter Front-End.

Quang Huy Le, Dang Khoa Huynh, Defu Wang, Thomas Kämpfe, Steffen Lehmann

Proceedings of the 49th European Solid-State Device Research Conference, 2019

Assessment of a Thick-Oxide Transistor from the 22FDX® Platform for 5G NR sub-6 GHz FEMs.

Quang Huy Le, Dang Khoa Huynh, Defu Wang, Thomas Kämpfe, Zhixing Zhao, Steffen Lehmann

Proceedings of the 2nd IEEE 5G World Forum, 5GWF 2019, Dresden, Germany, September 30, 2019