R. Bottini

According to our database, R. Bottini authored at least 5 papers between 2003 and 2018.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2018

Non-poissonian behavior of hot carrier degradation induced variability in MOSFETs.

Roberta Bottini, Andrea Ghetti, Sara Vigano, Maria Grazia Valentini, Pratap Murali, Chandra Mouli

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2007

High voltage transistor degradation in NVM pump application.

Roberta Bottini, Sonia Costantini, Nadia Galbiati, Andrea Ghetti, Gabriella Ghidini, Aurelio Giancarlo Mauri, Claudia Scozzari, Alessandro Sebastiani

Microelectron. Reliab., 2007

2005

In situ steam generation (ISSG) versus standard steam technology: impact on oxide reliability.

M. Langenbuch, R. Bottini, Maria Elena Vitali, G. Ghidini

Microelectron. Reliab., 2005

Impact of interface and bulk trapped charges on transistor reliability.

G. Ghidini, M. Langenbuch, R. Bottini, D. Brazzelli, Andrea Ghetti, N. Galbiati, G. Giusto, A. Garavaglia

Microelectron. Reliab., 2005

2003

Impact of gate stack process on conduction and reliability of 0.18 mum PMOSFET.

G. Ghidini, A. Garavaglia, G. Giusto, Andrea Ghetti, R. Bottini, D. Peschiaroli, M. Scaravaggi, F. Cazzaniga, Daniele Ielmini

Microelectron. Reliab., 2003