G. Ghidini

According to our database1, G. Ghidini authored at least 13 papers between 2001 and 2012.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Links

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Bibliography

2012
Charge-related phenomena and reliability of non-volatile memories.
Microelectron. Reliab., 2012

2009
Trapped charge and stress induced leakage current (SILC) in tunnel SiO<sub>2</sub> layers of de-processed MOS non-volatile memory devices observed at the nanoscale.
Microelectron. Reliab., 2009

2007
High-K dielectrics for inter-poly application in non volatile memories.
Microelectron. Reliab., 2007

Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs.
Microelectron. Reliab., 2007

2006
Degradation of static and dynamic behavior of CMOS inverters during constant and pulsed voltage stress.
Microelectron. Reliab., 2006

2005
In situ steam generation (ISSG) versus standard steam technology: impact on oxide reliability.
Microelectron. Reliab., 2005

Impact of interface and bulk trapped charges on transistor reliability.
Microelectron. Reliab., 2005

Tunnel oxide degradation under pulsed stress.
Microelectron. Reliab., 2005

2003
Impact of gate stack process on conduction and reliability of 0.18 mum PMOSFET.
Microelectron. Reliab., 2003

Anomalous gate oxide conduction on isolation edges: analysis and process optimization.
Microelectron. Reliab., 2003

Ionising radiation effects on MOSFET drain current.
Microelectron. Reliab., 2003

2002
Evaluation methodology of thin dielectrics for non-volatile memory application.
Microelectron. Reliab., 2002

2001
Impact of the As dose in 0.35 mum EEPROM technology: characterization and modeling.
Microelectron. Reliab., 2001


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