Richard Q. Williams

According to our database, Richard Q. Williams authored at least 4 papers between 2007 and 2014.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2014

BSIM6 - Benchmarking the Next-Generation MOSFET Model for RF Applications.

Anupam Dutta, Saurabh Sirohi, Ethirajan Tamilmani, Harshit Agarwal, Yogesh Singh Chauhan, Richard Q. Williams

Proceedings of the 2014 27th International Conference on VLSI Design, 2014

2008

Compact modeling and simulation of PD-SOI MOSFETs: Current status and challenges.

Jung-Suk Goo, Richard Q. Williams, Glenn O. Workman, Qiang Chen, Sungjae Lee, Edward J. Nowak

Proceedings of the IEEE 2008 Custom Integrated Circuits Conference, 2008

2007

A High-Performance, Low Leakage, and Stable SRAM Row-Based Back-Gate Biasing Scheme in FinFET Technology.

Rajiv V. Joshi, Keunwoo Kim, Richard Q. Williams, Edward J. Nowak, Ching-Te Chuang

Proceedings of the 20th International Conference on VLSI Design (VLSI Design 2007), 2007

A floating-body dynamic supply boosting technique for low-voltage sram in nanoscale PD/SOI CMOS technologies.

Rajiv V. Joshi, Rouwaida Kanj, Keunwoo Kim, Richard Q. Williams, Ching-Te Chuang

Proceedings of the 2007 International Symposium on Low Power Electronics and Design, 2007